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Register a new userNegative piezoelectricity in low--dimensional materials
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In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical example, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoelectric responses, the anomalous negative piezoelectricity in CuInP$_2$S$_6$ results from its negative clamped--ion term, which cannot be compensated by the positive internal strain part. Here, we propose a more general rule that having a negative clamped--ion term should be universal among piezoelectric materials, which is attributed to the lag of Wannier center effect. The internal--strain term, which is the change in polarization due to structural relaxation in response to strain, is mostly determined by the spatial structure and chemical bonding of the material. In a low--dimensional piezoelectric material as CuInP$_2$S$_6$, the internal--strain term is approximately zero. This is because the internal structure of the molecular layers, which are bonded by the weak van der Waals interaction, responds little to the strain. As a result, the magnitude of the dipole, which depends strongly on the dimension and structure of the molecular layer, also has a small response with respect to strain. An equation bridging the internal strain responses in low--dimensional and three--dimensional piezoelectrics is also derived to analytically express this point. This work aims to deepen our understanding about this anomalous piezoelectric effect, especially in low--dimensional materials, and provide strategies for discovering materials with novel electromechanical properties.
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The so-called interlayer-sliding ferroelectricity was recently proposed as an unconventional route to pursuit electric polarity in van der Waals multi-layers, which was already experimentally confirmed in WTe$_2$ bilayer even though it is metallic. Very recently, another van der Waals system, i.e., the ZrI$_2$ bilayer, was predicted to exhibit the interlayer-sliding ferroelectricity with both in-plane and out-of-plane polarizations [Phys. Rev. B textbf{103}, 165420 (2021)]. Here the ZrI$_2$ bulk is studied, which owns two competitive phases ($alpha$ textit{vs} $beta$), both of which are derived from the common parent $s$-phase. The $beta$-ZrI$_2$ owns a considerable out-of-plane polarization ($0.39$ $mu$C/cm$^2$), while its in-plane component is fully compensated. Their proximate energies provide the opportunity to tune the ground state phase by moderate hydrostatic pressure and uniaxial strain. Furthermore, the negative longitudinal piezoelectricity in $beta$-ZrI$_2$ is dominantly contributed by the enhanced dipole of ZrI$_2$ layers as a unique characteristic of interlayer-sliding ferroelectricity, which is different from many other layered ferroelectrics with negative longitudinal piezoelectricity like CuInP$_2$S$_6$.
A series of oxytetrahalides WO$X_4$ ($X$: a halogen element) that form quasi-one-dimensional chains is investigated using first-principles calculations. The crystal structures, electronic structures, as well as ferroelectric and piezoelectric properties are discussed in detail. Group theory analysis shows that the ferroelectricity in this family originates from an unstable polar phonon mode $Gamma_1^-$ induced by the Ws $d^0$ orbital configuration. Their polarization magnitudes are found to be comparable to widely used ferroelectric perovskites. Because of its quasi-one-dimensional characteristics, the inter-chain domain wall energy density is low, leading to loosely-coupled ferroelectric chains. This is potentially beneficial for high density ferroelectric memories: we estimate that the upper-limit of memory density in these compounds could reach hundreds of terabytes per square inch.
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is todays most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.
The last decade has seen intense research in materials with reduced dimensionality. The low dimensionality leads to interesting electronic behavior due to electronic confinement and reduced screening. The investigations have to a large extent focused on 2D materials both in their bulk form, as individual layers a few atoms thick, and through stacking of 2D layers into heterostructures. The identification of low-dimensional compounds is therefore of key interest. Here, we perform a geometric analysis of material structures, demonstrating a strong clustering of materials depending on their dimensionalities. Based on the geometric analysis, we propose a simple scoring parameter to identify materials of a particular dimension or of mixed dimensionality. The method identifies spatially connected components of the materials and gives a measure of the degree of 1D-ness, 2D-ness, etc., for each component. The scoring parameter is applied to the Inorganic Crystal Structure Database and the Crystallography Open Database ranking the materials according to their degree of dimensionality. In the case of 2D materials the scoring parameter is seen to clearly separate 2D from non-2D materials and the parameter correlates well with the bonding strength in the layered materials. About 3000 materials are identified as one-dimensional, while more than 9000 are mixed-dimensionality materials containing a molecular (0D) component. The charge states of the components in selected highly ranked materials are investigated using density functional theory and Bader analysis showing that the spatially separated components have either zero charge, corresponding to weak interactions, or integer charge, indicating ionic bonding.
The control of electromechanical responses within bonding regions is essential to face frontier challenges in nanotechnologies, such as molecular electronics and biotechnology. Here, we present Ib{eta}-nanocellulose as a potentially new orthotropic 2D piezoelectric crystal. The predicted in-layer piezoelectricity is originated on a sui-generis hydrogen bonds pattern. Upon this fact and by using a combination of ab-initio and ad-hoc models, we introduce a description of electrical profiles along chemical bonds. Such developments lead to obtain a rationale for modelling the extended piezoelectric effect originated within bond scales. The order of magnitude estimated for the 2D Ib{eta}-nanocellulose piezoelectric response, ~pm V-1, ranks this material at the level of currently used piezoelectric energy generators and new artificial 2D designs. Such finding would be crucial for developing alternative materials to drive emerging nanotechnologies.
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