No Arabic abstract
The analogy between magnetism and electricity has long been established by Maxwell in the 19th century, in spite of their subtle difference. While magnetic materials display paramagnetism, ferromagnetism, antiferromagnetism, and diamagnetism, only paraelectricity, ferroelectricity, and antiferrolelectricity have been found in dielectric materials. The missing `diaelectricity may be found if there exists a material that has a dc-polarization opposing the electric field or a negative dielectric susceptibility epsilon-1, with epsilon being the real part of the relative dielectric constant. Both of these properties have been observed in nano-particle aggregates under a dc electric bias field at room temperature. A possible collective effect in the nano-particle aggregates is proposed to account for the observation. `Diaelectricity implies overscreening by polarization to the external charges. Materials with a negative static epsilon are expected to provide attraction to similar charges and unusual scattering to electromagnetic waves with possible profound implications for high temperature superconductivity and communication.
We show that room temperature resistivity of Ba0.5Sr1.5Zn2Fe12O22 single crystals increases by more than three orders of magnitude upon being subjected to optimized heat treatments. The increase in the resistivity allows the determination of magnetic field (H)-induced ferroelectric phase boundaries up to 310 K through the measurements of dielectric constant at a frequency of 10 MHz. Between 280 and 310 K, the dielectric constant curve shows a peak centered at zero magnetic field and thereafter decreases monotonically up to 0.1 T, exhibiting a magnetodielectric effect of 1.1%. This effect is ascribed to the realization of magnetic field-induced ferroelectricity at an H value of less than 0.1 T near room temperature. Comparison between electric and magnetic phase diagrams in wide temperature- and field-windows suggests that the magnetic field for inducing ferroelectricity has decreased near its helical spin ordering temperature around 315 K due to the reduction of spin anisotropy in Ba0.5Sr1.5Zn2Fe12O22.
Bismuth ferrite, BiFeO3, is the only known room-temperature multiferroic material. We demonstrate here, using neutron scattering measurements in high quality single crystals, that the antiferromagnetic and ferroelectric orders are intimately coupled. Initially in a single ferroelectric state, our crystals have a canted antiferromagnetic structure describing a unique cycloid. Under electrical poling, polarisation re-orientation induces a spin flop. We argue here that the coupling between the two orders may be stronger in the bulk than that observed in thin films where the cycloid is absent.
The significance of a negative dielectric constant has long been recognized. We report here the observation of a field-induced large negative dielectric constant of aggregates of oxide nano-particles at frequencies below ~ 1 Hz at room temperature. The accompanying induced charge detected opposes the electric field applied in the field-induced negative dielectric constant state. A possible collective effect in the nano-particle aggregates is proposed to account for the observations. Materials with a negative dielectric constant are expected to provide an attraction between similar charges and unusual scattering to electromagnetic waves with possible profound implications for high temperature superconductivity and communications.
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of inducing a five orders of magnitude change in the room temperature resistivity of Sr2IrO4. The extreme sensitivity of the electronic structure to anisotropic deformations opens up a new angle of interest on this material, and the giant and fully reversible perpendicular piezoresistance makes iridates a promising material for room temperature piezotronic devices.
We demonstrate that magnetic skyrmions with a mean diameter around 60 nm can be stabilized at room temperature and zero external magnetic field in an exchange-biased Pt/Co/NiFe/IrMn multilayer stack. This is achieved through an advanced optimization of the multilayer stack composition in order to balance the different magnetic energies controlling the skyrmion size and stability. Magnetic imaging is performed both with magnetic force microscopy and scanning Nitrogen-Vacancy magnetometry, the latter providing unambiguous measurements at zero external magnetic field. In such samples, we show that exchange bias provides an immunity of the skyrmion spin texture to moderate external magnetic field, in the tens of mT range, which is an important feature for applications as memory devices. These results establish exchange-biased multilayer stacks as a promising platform towards the effective realization of memory and logic devices based on magnetic skyrmions.