No Arabic abstract
Conductance quantization was measured in submicron constrictions of PbTe, patterned into narrow,12 nm wide quantum wells deposited between Pb$_{0.92}$Eu$_{0.08}$Te barriers. Because the quantum confinement imposed by the barriers is much stronger than the lateral one, the one-dimensional electron energy level structure is very similar to that usually met in constrictions of AlGaAs/GaAs heterostructures. However, in contrast to any other system studied so far, we observe precise conductance quantization in $2e^2/h$ units, {it despite of significant amount of charged defects in the vicinity of the constriction}. We show that such extraordinary results is a consequence of the paraelectric properties of PbTe, namely, the suppression of long-range tails of the Coulomb potentials due to the huge dielectric constant.
We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF$_2$ substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb$_{0.92}$Eu$_{0.08}$Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle gamma is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F approx 1.5 times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.
The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement of the quantization. This suppression is traced back to interaction-induced modifications of the band structure leading to the formation of compressible strips in the middle of GNRs. It is also shown that the hard wall confinement combined with electron interaction generates overlaps between forward and backward propagating states, which may significantly enhance backscattering in realistic GNRs. The relation to available experiments is discussed.
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.
We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $mu$m. The observed quantization is in agreement with that predicted by theoretical calculations.