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Register a new userGeneric suppression of conductance quantization of interacting electrons in graphene nanoribbons in a perpendicular magnetic field
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The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement of the quantization. This suppression is traced back to interaction-induced modifications of the band structure leading to the formation of compressible strips in the middle of GNRs. It is also shown that the hard wall confinement combined with electron interaction generates overlaps between forward and backward propagating states, which may significantly enhance backscattering in realistic GNRs. The relation to available experiments is discussed.
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We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $mu$m. The observed quantization is in agreement with that predicted by theoretical calculations.
We study the effect of electron-electron interaction and spin on electronic and transport properties of gated graphene nanoribbons (GNRs) in a perpendicular magnetic field in the regime of the lowest Landau level (LL). The electron-electron interaction is taken into account using the Hartree and Hubbard approximations, and the conductance of GNRs is calculated on the basis of the recursive Greens function technique within the Landauer formalism. We demonstrate that, in comparison to the one-electron picture, electron-electron interaction leads to the drastic changes in the dispersion relation and structure of propagating states in the regime of the lowest LL showing a formation of the compressible strip and opening of additional conductive channels in the middle of the ribbon. We show that the latter are very sensitive to disorder and get scattered even if the concentration of disorder is moderate. In contrast, the edge states transport is very robust and can not be suppressed even in the presence of a strong spin-flipping.
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We present experimental results of high frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.
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