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Register a new userThe effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3
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The effects of Cu-doping on the structural, magnetic, and transport properties of La0.7Sr0.3Mn1-xCuxO3 (0 < x < 0.20) have been studied using neutron diffraction, magnetization and magnetoresistance (MR) measurements. All samples show the rhombohedral structure with the R3c space-group from 10K to room temperature (RT). Neutron diffraction data suggest that some of the Cu ions have a Cu3+ state in these compounds. The substitution of Mn by Cu affects the Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization of the distortion of the MnO6 octahedron. Resistivity measurements show that a metal to insulator transition occurs for the x more than 0.15 samples. The x = 0.15 sample shows the highest MR(_80%), which might result from the co-existence of Cu3+/Cu2+ and the dilution effect of Cu-doping on the double exchange interaction.
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Ti-substituted perovskites, La0.7Sr0.3Mn1-xTixO3, with x between 0 to 0.20, were investigated by neutron diffraction, magnetization, electric resistivity, and magnetoresistance (MR) measurements. All samples show a rhombohedral structure (space group R3c) from 10 K to room temperature. At room temperature, the cell parameters a, c and the unit cell volume increase with increasing Ti content. However, at 10 K, the cell parameter a has a maximum value for x = 0.10, and decreases for x greater than 0.10, while the unit cell volume remains nearly constant for x greater than 0.10. The average (Mn,Ti)-O bond length increases up to x=0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases with increasing Ti content to its minimum value at x=0.15 at room temperature. Below the Curie temperature T_C, the resistance exhibits metallic behavior for the x _ 0.05 samples. A metal (semiconductor) to insulator transition is observed for the x_ 0.10 samples. A peak in resistivity appears below T_C for all samples, and shifts to a lower temperature as x increases. The substitution of Mn by Ti decreases the 2p-3d hybridization between O and Mn ions, reduces the bandwidth W, and increases the electron-phonon coupling. Therefore, the TC shifts to a lower temperature and the resistivity increases with increasing Ti content. A field-induced shift of the resistivity maximum occurs at x less than or equal to 0.10. The maximum MR effect is about 70% for La0.7Sr0.3Mn0.8Ti0.2O3. The separation of TC and the resistivity maximum temperature Tmax enhances the MR effect in these compounds due to the weak coupling between the magnetic ordering and the resistivity as compared with La0.7Sr0.3MnO3.
Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n-type Seebeck coefficient (S ~ -400 mu V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 mu V/K). The largest power factor (S2/{rho} = 62 mu W/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness ranging from 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate (STO) substrates by pulsed laser deposition, and their structure and morphology characterized at room temperature. Magnetic and electric transport properties of the as-processed thin films reveal an abnormal behavior in the temperature dependent magnetization M(T) below the antiferrodistortive STO phase transition (TSTO) and also an anomaly in the magnetoresistance and electrical resistivity close to the same temperature. Up to 100 nm LSMO thin films, an in-excess magnetization and pronounced changes in the coercivity are evidenced, achieved through the interface-mediated magnetoelastic coupling with antiferrodistortive domain wall movement occurring below TSTO. Contrarily, for thicker LSMO thin films, above 100 nm, an in-defect magnetization is observed. This reversed behavior can be understood within the emergence in the upper layer of the film, observed by high resolution transmission electron microscopy, of a branched structure needed to relax elastic energy stored in the film which leads to randomly oriented magnetic domain reconstructions. For enough high-applied magnetic fields, as thermodynamic equilibrium is reached, a fully suppression of the anomalous magnetization occurs, wherein the temperature dependence of the magnetization starts to follow the expected Brillouin behavior.
Here, we report the growth and characterization of single crystals of NdxSb2-xTe3, by solid state reaction route via self-flux method. The phase and layered growth are confirmed through x-ray diffraction and Scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5Tesla for Sb2Te3 are 75 percent at 2.5K and 60 percent at 20K, but only 40 percent at 5K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto conductivity of both pure and Nd doped crystals at low magnetic fields below 1 Tesla which is analyzed using Hikami Larkin Nagaoka (HLN) model. For Sb2Te3 the fitted parameters alpha values are -1.02 and -0.58 and the phase coherence lengths are 50.8(6)nm & 34.9(8)nm at temperatures 2.5K and 20K respectively. For Nd0.1Sb1.9Te3, alpha is -0.29 and coherence length is 27.2(1) nm at 5K. The {alpha} values clearly show the presence of weak anti localization effect in both, pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.
In this work, the structural and transport properties of (Nd0.7-xLax)Sr0.3MnO3 manganites with x = 0, 0.1 and 0.2 prepared by solid state reaction route are studied. These compounds are found to be crystallized in orthorhombic structural form. The influence of La substitution in place of Nd at A-site shifts the metal to semiconductor/insulator transition temperature (TMI) peak towards room temperature with x = 0, 0.1 and 0.2. A composition prepared with the value of x = 0.2 in (Nd0.7-xLax)0.7Sr0.3MnO3 manganites (i.e. (Nd0.5La0.2)0.7Sr0.3MnO3), TMI was observed at 289 K which is close to room temperature. The maximum percentage of TCR values of compounds are increasing with average radius <r_A> but %TCR are slightly equal in x = 0.1 and 0.2 as compared to the parent compound. The maximum %TCR value is almost independent with A-site average radius <r_A> in x = 0.1 and 0.2. The electrical resistivity data are explored by different theoretical models and it has been concluded that at low temperature (ferromagnetic metallic region) conduction mechanism presumably due to the combined effect of electron-electron, electron-phonon and electron-magnon scattering, while in paramagnetic semiconducting regime, the variation of resistivity with temperature are explained by (1) Mott variable range hopping mechanism, (2) Adiabatic small polaron hopping and (3) Thermally activated hopping. The polaron hopping and thermal activation energies are decreasing with increase of an average A-site ionic radius (<rA>). An appropriate enlightenment for the observed behavior is discussed in detail.
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