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Register a new userEffect of internal chemical pressure on transport properties and TCR for sensors applications
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In this work, the structural and transport properties of (Nd0.7-xLax)Sr0.3MnO3 manganites with x = 0, 0.1 and 0.2 prepared by solid state reaction route are studied. These compounds are found to be crystallized in orthorhombic structural form. The influence of La substitution in place of Nd at A-site shifts the metal to semiconductor/insulator transition temperature (TMI) peak towards room temperature with x = 0, 0.1 and 0.2. A composition prepared with the value of x = 0.2 in (Nd0.7-xLax)0.7Sr0.3MnO3 manganites (i.e. (Nd0.5La0.2)0.7Sr0.3MnO3), TMI was observed at 289 K which is close to room temperature. The maximum percentage of TCR values of compounds are increasing with average radius <r_A> but %TCR are slightly equal in x = 0.1 and 0.2 as compared to the parent compound. The maximum %TCR value is almost independent with A-site average radius <r_A> in x = 0.1 and 0.2. The electrical resistivity data are explored by different theoretical models and it has been concluded that at low temperature (ferromagnetic metallic region) conduction mechanism presumably due to the combined effect of electron-electron, electron-phonon and electron-magnon scattering, while in paramagnetic semiconducting regime, the variation of resistivity with temperature are explained by (1) Mott variable range hopping mechanism, (2) Adiabatic small polaron hopping and (3) Thermally activated hopping. The polaron hopping and thermal activation energies are decreasing with increase of an average A-site ionic radius (<rA>). An appropriate enlightenment for the observed behavior is discussed in detail.
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Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n-type Seebeck coefficient (S ~ -400 mu V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 mu V/K). The largest power factor (S2/{rho} = 62 mu W/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.
The effects of Cu-doping on the structural, magnetic, and transport properties of La0.7Sr0.3Mn1-xCuxO3 (0 < x < 0.20) have been studied using neutron diffraction, magnetization and magnetoresistance (MR) measurements. All samples show the rhombohedral structure with the R3c space-group from 10K to room temperature (RT). Neutron diffraction data suggest that some of the Cu ions have a Cu3+ state in these compounds. The substitution of Mn by Cu affects the Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization of the distortion of the MnO6 octahedron. Resistivity measurements show that a metal to insulator transition occurs for the x more than 0.15 samples. The x = 0.15 sample shows the highest MR(_80%), which might result from the co-existence of Cu3+/Cu2+ and the dilution effect of Cu-doping on the double exchange interaction.
In pursue of a systematic characterization of rare-earth vanadates under compression, in this work we present a multifaceted study of the phase behavior of zircon-type orthovanadate PrVO$_4$ under high pressure conditions, up until 24 GPa. We have found that PrVO$_4$ undergoes a zircon to monazite transition at around 6 GPa, confirming previous results found by Raman experiments. A second transition takes place above 14 GPa, to a BaWO$_4$-I--type structure. The zircon to monazite structural sequence is an irreversible first-order transition, accompanied by a volume collapse of about 9.6%. Monazite phase is thus a metastable polymorph of PrVO$_4$. The monazite-BaWO$_4$-II transition is found to be reversible instead and occurs with a similar volume change. Here we report and discuss the axial and bulk compressibility of all phases. We also compare our results with those for other rare-earth orthovanadates. Finally, by means of optical-absorption experiments and resistivity measurements we determined the effect of pressure on the electronic properties of PrVO$_4$. We found that the zircon-monazite transition produces a collapse of the band gap and an abrupt decrease of the resistivity. The physical reasons for this behavior are discussed. Density-functional-theory simulations support our conclusions.
The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. Here, I clarify the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device. This is demonstrated for 3-dimensional topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic band gap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to design new materials systems and push into a new generation of topological technologies.
The effects of pressure generated in a liquid medium, clamp, pressure cell on the in-plane and c-axis resistance, temperature-dependent Hall coefficient and low temperature, magnetoresistance in CaFe2As2 are presented. The T - P phase diagram, including the observation of a complete superconducting transition in resistivity, delineated in earlier studies is found to be highly reproducible. The Hall resistivity and low temperature magnetoresistance are sensitive to different states/phases observed in CaFe2As2. Auxiliary measurements under uniaxial, c-axis, pressure are in general agreement with the liquid medium clamp cell results with some difference in critical pressure values and pressure derivatives. The data may be viewed as supporting the potential importance of non-hydrostatic components of pressure in inducing superconductivity in CaFe2As2.
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