No Arabic abstract
We report results of molecular dynamics simulations of amorphous ice for pressures up to 22.5 kbar. The high-density amorphous ice (HDA) as prepared by pressure-induced amorphization of Ih ice at T=80 K is annealed to T=170 K at various pressures to allow for relaxation. Upon increase of pressure, relaxed amorphous ice undergoes a pronounced change of structure, ranging from the low-density amorphous ice (LDA) at p=0, through a continuum of HDA states to the limiting very high-density amorphous ice (VHDA) regime above 10 kbar. The main part of the overall structural change takes place within the HDA megabasin, which includes a variety of structures with quite different local and medium-range order as well as network topology and spans a broad range of densities. The VHDA represents the limit to densification by adapting the hydrogen-bonded network topology, without creating interpenetrating networks. The connection between structure and metastability of various forms upon decompression and heating is studied and discussed. We also discuss the analogy with amorphous and crystalline silica. Finally, some conclusions concerning the relation between amorphous ice and supercooled water are drawn.
In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIMS consist of dense hillocks surrounded by a porous microstructure. The density of $a$-C thin films is a decisive parameter to judge their quality. Often, x-ray reflectivity (XRR) has been used to measure the density of carbon thin films. From the present work, we find that determination of density of carbon thin films, specially those with a thickness of few tens of nm, may not be accurate with XRR due to a poor scattering contrast between the film and substrate. By utilizing neutron reflectivity (NR) in the time of flight mode, a technique not commonly used for carbon thin films, we could accurately measure differences in the densities of $a$-C thin films deposited using dcMS and HiPIMS.
The nature of the amorphous state has been notably difficult to ascertain at the microscopic level. In addition to the fundamental importance of understanding the amorphous state, potential changes to amorphous structures as a result of radiation damage have direct implications for the pressing problem of nuclear waste encapsulation. Here, we develop new methods to identify and quantify the damage produced by high-energy collision cascades that are applicable to amorphous structures and perform large-scale molecular dynamics simulations of high-energy collision cascades in a model zircon system. We find that, whereas the averaged probes of order such as pair distribution function do not indicate structural changes, local coordination analysis shows that the amorphous structure substantially evolves due to radiation damage. Our analysis shows a correlation between the local structural changes and enthalpy. Important implications for the long-term storage of nuclear waste follow from our detection of significant local density inhomogeneities. Although we do not reach the point of convergence where the changes of the amorphous structure saturate, our results imply that the nature of this new converged amorphous state will be of substantial interest in future experimental and modelling work.
The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of $10^{17}-10^{18}$ cm$^{-3}$eV$^{-1}$. Two deep acceptor-like metal vacancy peaks with peak densities in the range of $10^{18}$ cm$^{-3}$eV$^{-1}$ and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the $a$-IGZO TFT threshold voltage to more positive values. Photoionization (h$ u$ > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in $a$-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies.
The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of widely varied conditions and are representative for this class of materials. We identify two different phases which are embedded in the a-Si:H matrix and quantified both according to their scattering cross-sections. First, 1.2 nm sized voids (multivacancies with more than 10 missing atoms) which form a superlattice with 1.6 nm void-to-void distance are detected. The voids are found in concentrations as high as 6*10^19 ccm in a-Si:H material that is deposited at a high rate. Second, dense ordered domains (DOD) that are depleted of hydrogen with 1 nm average diameter are found. The DOD tend to form 10-15 nm sized aggregates and are largely found in all a-Si:H materials considered here. These quantitative findings make it possible to understand the complex correlation between structure and electronic properties of a-Si:H and directly link them to the light-induced formation of defects. Finally, a structural model is derived, which verifies theoretical predictions about the nanostructure of a-Si:H.
We employ classical molecular dynamics simulations to investigate the molecular-level structure of water during the isothermal compression of hexagonal ice (I$h$) and low-density amorphous (LDA) ice at low temperatures. In both cases, the system transforms to high-density amorphous ice (HDA) via a first-order-like phase transition. We employ a sensitive local order metric (LOM) [Martelli et. al., Phys. Rev. B, 97, 064105 (2018)], that can discriminate among different crystalline and non crystalline ice structures and is based on the positions of the oxygen atoms in the first and/or second hydration shell. Our results confirm that LDA and HDA are indeed amorphous, i.e., they lack of polydispersed ice domains. Interestingly, HDA contains a small number of domains that are reminiscent of the unit cell of ice IV, although the hydrogen-bond network (HBN) of these domains differ from the HBN of ice IV. The presence of ice IV-like domains provides some support to the hypothesis that HDA could be the result of a detour on the HBN rearrangement along the I$h$-to-ice IV pressure induced transformation. Both nonequilibrium LDA-to-HDA and I$h$-to-HDA transformations are two-steps processes where a small distortion of the HBN first occurs at low pressures and then, a sudden, extensive re-arrangement of hydrogen bonds at the corresponding transformation pressure follows. Interestingly, the I$h$-to-HDA and LDA-to-HDA transformations occur when LDA and I$h$ have similar local order, as quantified by the site-averaged LOMs. Since I$h$ has a perfect tetrahedral HBN, while LDA does not, it follows that higher pressures are needed to transform I$h$ into HDA than that for the conversion of LDA to HDA. In correspondence with both first-order-like phase transitions, the samples are composed of a large HDA cluster that percolates within the I$h$/LDA samples.