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Register a new userEffect of Joule heating in current-driven domain wall motion
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It was found that high current density needed for the current-driven domain wall motion results in the Joule heating of the sample. The sample temperature, when the current-driven domain wall motion occurred, was estimated by measuring the sample resistance during the application of a pulsed-current. The sample temperature was 750 K for the threshold current density of 6.7 x 10^11 A/m2 in a 10 nm-thick Ni81Fe19 wire with a width of 240 nm. The temperature was raised to 830 K for the current density of 7.5 x 10^11 A/m2, which is very close to the Curie temperature of bulk Ni81Fe19. When the current density exceeded 7.5 x 10^11 A/m2, an appearance of a multi-domain structure in the wire was observed by magnetic force microscopy, suggesting that the sample temperature exceeded the Curie temperature.
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In order to explain recent experiments reporting a motion of magnetic domain walls (DW) in nanowires carrying a current, we propose a modification of the spin transfer torque term in the Landau-Lifchitz-Gilbert equation. We show that it explains, with reasonable parameters, the measured DW velocities as well as the variation of DW propagation field under current. We also introduce coercivity by considering rough wires. This leads to a finite DW propagation field and finite threshold current for DW propagation, hence we conclude that threshold currents are extrinsic. Some possible models that support this new term are discussed.
We investigated the aspect ratio (thickness/width) dependence of the threshold current density required for the current-driven domain wall (DW) motion for the Ni81Fe19 nanowires. It has been shown theoretically that the threshold current density is proportional to the product of the hard-axis magnetic anisotropy Kperp and the DW width lamda. (Phys. Rev. Lett. 92, 086601 (2004).) We show experimentally that Kperp can be controlled by the magnetic shape anisotropy in the case of the Ni81Fe19 nanowires, and that the threshold current density increases with an increase of Kperp*l. We succeeded to reduce the threshold current density by half by the shape control.
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