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Register a new userNanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2
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The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.
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The use of MgB2 in superconducting applications still awaits for the development of a MgB2-based material where both current-carrying performance and critical magnetic field are optimized simultaneously. We achieved this by doping MgB2 with double-wall carbon nanotubes (DWCNT) as a source of carbon in polycrystalline samples. The optimum nominal DWCNT content for increasing the critical current density, Jc is in the range 2.5-10%at depending on field and temperature. Record values of the upper critical field, Hc2(4K) = 41.9 T (with extrapolated Hc2(0) ~ 44.4 T) are reached in a bulk sample with 10%at DWCNT content. The measured Hc2 vs T in all samples are successfully described using a theoretical model for a two-gap superconductor in the dirty limit first proposed by Gurevich et al.
Measurements of the critical current density (Jc) by magnetization and the upper critical field (Hc2) by magnetoresistance have been performed for hafnium-doped MgB2. There has been a remarkable enhancement of Jc as compared to that by ion irradiation without any appreciable decrease in Tc, which is beneficial from the point of view of applications. The irreversibility line extracted from Jc shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB2 phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of Jc in MgB2 superconductor.
Superconducting MgB2 strands with nanometer-scale SiC additions have been investigated systematically using transport and magnetic measurements. A comparative study of MgB2 strands with different nano-SiC addition levels has shown C-doping-enhanced critical current density Jc through enhancements in the upper critical field, Hc2, and decreased anisotropy. The critical current density and flux pinning force density obtained from magnetic measurements were found to greatly differ from the values obtained through transport measurements, particularly with regards to magnetic field dependence. The differences in magnetic and transport results are largely attributed to connectivity related effects. On the other hand, based on the scaling behavior of flux pinning force, there may be other effective pinning centers in MgB2 strands in addition to grain boundary pinning.
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
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