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Register a new userEnhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study
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Added by
Dr. Sujit Kumar Bandyopadhyay
Publication date
2008
fields
Physics
and research's language is
English
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Measurements of the critical current density (Jc) by magnetization and the upper critical field (Hc2) by magnetoresistance have been performed for hafnium-doped MgB2. There has been a remarkable enhancement of Jc as compared to that by ion irradiation without any appreciable decrease in Tc, which is beneficial from the point of view of applications. The irreversibility line extracted from Jc shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB2 phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of Jc in MgB2 superconductor.
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MoSi2 doped MgB2 tapes with different doping levels were prepared through the in-situ powder-in-tube method using Fe as the sheath material. Effect of MoSi2 doping on the MgB2/Fe tapes was investigated. It is found that the highest JC value was achieved in the 2.5 at.% doped samples, more than a factor of 4 higher compared to the undoped tapes at 4.2 K, 10 T, then further increasing the doping ratio caused a reduction of JC. Moreover, all doped tapes exhibited improved magnetic field dependence of Jc. The enhancement of JC-B properties in MoSi2 doped MgB2 tapes is attributed to good grain linkage and the introduction of effective flux pining centers with the doping.
The use of MgB2 in superconducting applications still awaits for the development of a MgB2-based material where both current-carrying performance and critical magnetic field are optimized simultaneously. We achieved this by doping MgB2 with double-wall carbon nanotubes (DWCNT) as a source of carbon in polycrystalline samples. The optimum nominal DWCNT content for increasing the critical current density, Jc is in the range 2.5-10%at depending on field and temperature. Record values of the upper critical field, Hc2(4K) = 41.9 T (with extrapolated Hc2(0) ~ 44.4 T) are reached in a bulk sample with 10%at DWCNT content. The measured Hc2 vs T in all samples are successfully described using a theoretical model for a two-gap superconductor in the dirty limit first proposed by Gurevich et al.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.
A strong effect of sample size on magnetic Jc(H) was observed for bulk MgB2 when Jc is obtained directly from the critical state model. Thus obtained zero-field Jc (Jc0) decreases strongly with the sample size, attaining a constant value for the samples larger than a few millimetres. On the other hand, the irreversibility field (Hirr) defined at Jc = 100 A/cm2 increases with the sample size. The decrease of Jc0 is described in terms of voids in the bulk MgB2 samples and superconducting screening around the cells of superconducting material between these voids (35 micro-m), because of concentration of the current in the narrow bridges connecting the cells. For samples larger than a few millimetres, the value of magnetic Jc is in agreement with the transport Jc and it is restricted by the voids. The critical state model is not suitable for obtaining Jc for small bulk MgB2. The increase of Hirr with the sample size is an artefact of defining Hirr by the value of Jc at which an additional superconducting screening on 1mm scale dominates Dm.
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