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Register a new userCorrelated enhancement of Hc2 and Jc in carbon nanotube-doped MgB2
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The use of MgB2 in superconducting applications still awaits for the development of a MgB2-based material where both current-carrying performance and critical magnetic field are optimized simultaneously. We achieved this by doping MgB2 with double-wall carbon nanotubes (DWCNT) as a source of carbon in polycrystalline samples. The optimum nominal DWCNT content for increasing the critical current density, Jc is in the range 2.5-10%at depending on field and temperature. Record values of the upper critical field, Hc2(4K) = 41.9 T (with extrapolated Hc2(0) ~ 44.4 T) are reached in a bulk sample with 10%at DWCNT content. The measured Hc2 vs T in all samples are successfully described using a theoretical model for a two-gap superconductor in the dirty limit first proposed by Gurevich et al.
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MoSi2 doped MgB2 tapes with different doping levels were prepared through the in-situ powder-in-tube method using Fe as the sheath material. Effect of MoSi2 doping on the MgB2/Fe tapes was investigated. It is found that the highest JC value was achieved in the 2.5 at.% doped samples, more than a factor of 4 higher compared to the undoped tapes at 4.2 K, 10 T, then further increasing the doping ratio caused a reduction of JC. Moreover, all doped tapes exhibited improved magnetic field dependence of Jc. The enhancement of JC-B properties in MoSi2 doped MgB2 tapes is attributed to good grain linkage and the introduction of effective flux pining centers with the doping.
The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.
Measurements of the critical current density (Jc) by magnetization and the upper critical field (Hc2) by magnetoresistance have been performed for hafnium-doped MgB2. There has been a remarkable enhancement of Jc as compared to that by ion irradiation without any appreciable decrease in Tc, which is beneficial from the point of view of applications. The irreversibility line extracted from Jc shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB2 phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of Jc in MgB2 superconductor.
The evolution of the superconducting properties of the carbon-doped MgB2 superconductors, MgB(2-x)Cx (x= 0.02, 0.04, 0.06) have been investigated by the transverse-field muon spin rotation (TF-muSR) technique. The low-temperature depolarisation rate, sigma(0) at 0.6 T which is proportional to the second moment of the field distribution of the vortex lattice decreases monotonically with increasing electron doping and decreasing Tc. In addition, the temperature dependence of sigma(T) has been analysed in terms of a two-gap model. The size of the two superconducting gaps decreases linearly as the carbon content increases, while the doping effect is more pronounced for the smaller gap related to the 3D pi-sheets of the Fermi surface.
We report on significant flux pinning enhancement in MgB2/Fe tapes that has been easily obtained by a simple and cheap route using acetone as both an efficient ball-milling medium and liquid additive through the in situ method. Results showed that the highly reactive C released from the decomposition of the acetone substituted into B sites, accompanied by the grain refinement effect due to the acetone doping. At 4.2 K, the transport Jc for the 5 wt % acetone doped tapes sintered at 700C reached up to 2.4x10^4 A/cm^2 at 10 T, which is even higher than that of the nano-C added samples heated at 900C.
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