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Register a new userCircularly polarized electroluminescence in spin-LED structures
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Added by
Michael E. Flatt\\'e
Publication date
2003
fields
Physics
and research's language is
English
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We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons are spin polarized. It is essential to account for the orbital coherence of the spin-polarized holes when they are captured in the quantum well to understand recent experiments demonstrating polarized edge emission from hole spin injection. The calculations explain many features of the circular polarizations of edge and vertically emitted luminescence for spin polarized hole injection from Mn-doped ferromagnetic semiconductors, and for spin-polarized electron injection from II-VI dilute magnetic semiconductors.
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Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a paradigm shift in magnetic nanodevices. Magnetization control of ferromagnetic materials only by circularly polarized light has received increasing attention both as a fundamental probe of the interactions of light and magnetism but also for future high-density magnetic recording technologies. Here we show that for granular FePt films, designed for ultrahigh-density recording, the optical magnetic switching by circularly polarized light is an accumulative effect from multiple optical pulses. We further show that deterministic switching of high anisotropy materials by the combination of circularly polarized light and modest external magnetic fields, thus revealing a pathway towards technological implementation.
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.
The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins.
Carbon nanotubes (CNT) belong to the most promising new materials which can in the near future revolutionize the conventional electronics. When sandwiched between ferromagnetic electrodes, the CNT behaves like a spacer in conventional spin-valves, leading quite often to a considerable giant magneto-resistance effect (GMR). This paper is devoted to reviewing some topics related to electron correlations in CNT. The main attention however is directed to the following effects essential for electron transport through nanotubes: (i) nanotube/electrode coupling and (ii) inter-tube interactions.It is shown that these effects may account for some recent experimental reports on GMR, including those on negative (inverse) GMR.
We investigate the current-voltage characteristics of a II-VI semiconductor resonant-tunneling diode coupled to a diluted magnetic semiconductor injector. As a result of an external magnetic field, a giant Zeeman splitting develops in the injector, which modifies the band structure of the device, strongly affecting the transport properties. We find a large increase in peak amplitude accompanied by a shift of the resonance to higher voltages with increasing fields. We discuss a model which shows that the effect arises from a combination of three-dimensional incident distribution, giant Zeeman spin splitting and broad resonance linewidth.
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