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Added by
Guillaume Froehlicher
Publication date
2018
fields
Physics
and research's language is
English
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The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins.
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We study photoluminescence (PL) spectra and exciton dynamics of MoS$_2$ monolayer (ML) grown by the chemical vapor deposition technique. In addition to the usual direct A-exciton line we observe a low-energy line of bound excitons dominating the PL spectra at low temperatures. This line shows unusually strong redshift with increase in the temperature and submicrosecond time dynamics suggesting indirect nature of the corresponding transition. By monitoring temporal dynamics of exciton PL distribution in the ML plane we observe diffusive transport of A-excitons and measure the diffusion coefficient up to $40$~cm$^2$/s at elevated excitation powers. The bound exciton spatial distribution spreads over tens of microns in $sim 1$ $mu$s. However this spread is subdiffusive, characterized by a significant slowing down with time. The experimental findings are interpreted as a result of the interplay between the diffusion and Auger recombination of excitons.
Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum device technologies. The ability to tailor quantum emission through deterministic defect engineering is of growing importance for realizing scalable quantum architectures. However, a major difficulty is that defects need to be positioned site-selectively within the solid. Here, we overcome this challenge by controllably irradiating single-layer MoS$_{2}$ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion bombarded MoS$_{2}$ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons at optical wavelengths in an energy window of one to two hundred meV below the neutral 2D exciton of MoS$_{2}$. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron-hole complexes at defect states generated by the helium ion bombardment. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and exotic Hubbard systems.
The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS$_2$ is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS$_{2}$ monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS$_2$ monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A$_1^{}$ and in-plane E$^{}$ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides.
Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these materials can be deterministically initialized via irradiation with circularly polarized light. Here, we investigate the ultrafast dynamics of such a valley polarization in monolayer tungsten diselenide by means of time-resolved Kerr reflectometry. The observed Kerr signal in our sample stems exclusively from charge-neutral excitons. Our findings support the picture of a fast decay of the valley polarization of bright excitons due to radiative recombination, intra-conduction-band spin-flip transitions, intervalley-scattering processes, and the formation of long-lived valley-polarized dark states.
By pumping nonresonantly a MoS$_2$ monolayer at $13$ K under a circularly polarized cw laser, we observe exciton energy redshifts that break the degeneracy between B excitons with opposite spin. The energy splitting increases monotonically with the laser power reaching as much as $18$ meV, while it diminishes with the temperature. The phenomenon can be explained theoretically by considering simultaneously the bandgap renormalization which gives rise to the redshift and exciton-exciton Coulomb exchange interaction which is responsible for the spin-dependent splitting. Our results offer a simple scheme to control the valley degree of freedom in MoS$_2$ monolayer and provide an accessible method in investigating many-body exciton exciton interaction in such materials.
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