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Register a new userTemperature dependent total scattering structural study of CaCu3Ti4O12
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X-ray and neutron powder diffraction data as a function of temperature are analyzed for the colossal dielectric constant material CaCu3Ti4O12. The local structure is studied using atomic pair distribution function analysis. No evidence is found for enhanced oxygen displacement parameters suggesting that short-range octahedral tilt disorder is minimal. However, an unusual temperature dependence for the atomic displacement parameters of calcium and copper is observed. Temperature dependent modeling of the structure, using bond valence concepts, suggests that the calcium atoms become underbonded below approximately 260 K, which provides a rationale for the unusually high Ca displacement parameters at low temperature.
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The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and x-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great detail to document the influence of low-level doping with 3d metals on the antiferromagnetic structure and dielectric properties. In the light of possible magnetoelectric coupling in these doped ceramics, the dielectric measurements were also carried out in external magnetic fields up to 7 T, showing a minor but significant dependence of the dielectric constant on the applied magnetic field. Undoped CCTO is well-known for its colossal dielectric constant in a broad frequency and temperature range. With the present extended characterization of doped as well as undoped CCTO, we want to address the question why doping with only 1% Mn or 0.5% Fe decreases the room-temperature dielectric constant of CCTO by a factor of ~100 with a concomitant reduction of the conductivity, whereas 0.5% Ni doping changes the dielectric properties only slightly. In addition, diffraction experiments and magnetic investigations were undertaken to check for possible correlations of the magnitude of the colossal dielectric constants with structural details or with magnetic properties like the magnetic ordering, the Curie-Weiss temperatures, or the paramagnetic moment. It is revealed, that while the magnetic ordering temperature and the effective moment of all investigated CCTO ceramics are rather similar, there is a dramatic influence of doping and tempering time on the Curie-Weiss constant.
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this material because of the forbidden nature of its first order scattering and its opacity to visible lasers. Nevertheless, useful vibrational spectra from two-phonon processes are obtained with red lasers, probably because of a resonance in the concomitant electronic transitions. Here we report temperature dependent spectra, covering the 10-300 K range, for two samples with different sulfur isotopic compositions. The results are analyzed by comparison with ab initio calculations of the lattice dynamics of PbS and the corresponding densities of one and two-phonon states. Emphasis is placed on the analysis of the two phonon band centered at ~430 cm-1.
High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.
In doped CuGeO3 systems, such as (Cu1-xZnx)GeO3 and Cu(Ge1-xSix)O3, the spin-Peierls (SP) ordering (T<Tsp) coexists with the antiferromagnetic (AF) phase (T<TN<Tsp). Tsp decreases while TN increases with increasing x in low doping region. For higher x, however, the SP state disappears and only the AF state remains. These features are common for all the doped CuGeO3 systems so far studied, indicating the existence of universal T-x phase diagram. Recently, Masuda et al. carried out comprehensive magnetic susceptibility (chi) measurements of (Cu1-xMgx)GeO3, in which doping concentration can be controlled significantly better than the Zn doped systems. They found that TN suddenly jumps from 3.43 to 3.98K at the critical concentration xc sim 0.023 and that a drop in chi corresponding to the SP ordering also disappears at x>xc. They thus concluded that there is a compositional phase boundary between two distinct magnetic phases. To clarify the nature of two phases, we performed neutron-scattering measurements on (Cu1-xMgx)GeO3 single crystals with various x. Analysis of the data at fixed temperature points as a function of doping concentration has revealed sudden changes of order parameters at the critical concentration xc=0.027 +- 0.001. At finite temperatures below TN, the drastic increase of the AF moment takes place at xc. The spin-Peierls order parameter delta associated with lattice dimerization shows a precipitous decrease at all temperature below Tsp. However, it goes to zero above xc only at the low temperature limit.
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded in thick GaN and GaAs layers. Thin (Al,Ga)N and (Al,Ga)As barriers, respectively, prevent carriers diffusing in the GaN and GaAs layers to reach the well, which would broaden the profiles. The experimental CL profiles are found to be systematically wider than the energy loss distributions calculated by means of the Monte Carlo program CASINO, with the width monotonically increasing with decreasing temperature. This effect is observed for both GaN and GaAs and becomes more pronounced for higher acceleration voltages. We discuss this phenomenon in terms of the electron-phonon interaction controlling the energy relaxation of hot carriers, and of the non-equilibrium phonon population created by this relaxation process. Finally, we present a phenomenological approach to simulate the carrier generation volume that can be used for the investigation of the temperature dependence of carrier diffusion.
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