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Register a new userCorrelations of structural, magnetic, and dielectric properties of undoped and doped CaCu3Ti4O12
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The present work reports synthesis, as well as a detailed and careful characterization of structural, magnetic, and dielectric properties of differently tempered undoped and doped CaCu3Ti4O12 (CCTO) ceramics. For this purpose, neutron and x-ray powder diffraction, SQUID measurements, and dielectric spectroscopy have been performed. Mn-, Fe-, and Ni-doped CCTO ceramics were investigated in great detail to document the influence of low-level doping with 3d metals on the antiferromagnetic structure and dielectric properties. In the light of possible magnetoelectric coupling in these doped ceramics, the dielectric measurements were also carried out in external magnetic fields up to 7 T, showing a minor but significant dependence of the dielectric constant on the applied magnetic field. Undoped CCTO is well-known for its colossal dielectric constant in a broad frequency and temperature range. With the present extended characterization of doped as well as undoped CCTO, we want to address the question why doping with only 1% Mn or 0.5% Fe decreases the room-temperature dielectric constant of CCTO by a factor of ~100 with a concomitant reduction of the conductivity, whereas 0.5% Ni doping changes the dielectric properties only slightly. In addition, diffraction experiments and magnetic investigations were undertaken to check for possible correlations of the magnitude of the colossal dielectric constants with structural details or with magnetic properties like the magnetic ordering, the Curie-Weiss temperatures, or the paramagnetic moment. It is revealed, that while the magnetic ordering temperature and the effective moment of all investigated CCTO ceramics are rather similar, there is a dramatic influence of doping and tempering time on the Curie-Weiss constant.
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Using transmission electron microscopy (TEM) we studied CaCu3Ti4O12, an intriguing material that exhibits a huge dielectric response, up to kilohertz frequencies, over a wide range of temperature. Neither in single crystals, nor in polycrystalline samples, including sintered bulk- and thin-films, did we observe the twin domains suggested in the literature. Nevertheless, in the single crystals, we saw a very high density of dislocations with a Burger vector of [110], as well as regions with cation disorder and planar defects with a displacement vector 1/4[110]. In the polycrystalline samples, we observed many grain boundaries with oxygen deficiency, in comparison with the grain interior. The defect-related structural disorders and inhomogeneity, serving as an internal barrier layer capacitance (IBLC) in a semiconducting matrix, might explain the very large dielectric response of the material. Our TEM study of the structure defects in CaCu3Ti4O12 supports a recently proposed morphological model with percolating conducting regions and blocking regions.
In the present work the authors report results of broadband dielectric spectroscopy on various samples of CaCu3Ti4O12, including so far only rarely investigated single crystalline material. The measurements extend up to 1.3 GHz, covering more than nine frequency decades. We address the question of the origin of the colossal dielectric constants and of the relaxational behavior in this material, including the second relaxation reported in several recent works. For this purpose, the dependence of the temperature- and frequency-dependent dielectric properties on different tempering and surface treatments of the samples and on ac-field amplitude are investigated. Broadband spectra of a single crystal are analyzed by an equivalent circuit description, assuming two highly resistive layers in series to the bulk. Good fits could be achieved, including the second relaxation, which also shows up in single crystals. The temperature- and frequency-dependent intrinsic conductivity of CCTO is consistent with the Variable Range Hopping model. The second relaxation is sensitive to surface treatment and, in contrast to the main relaxation, also is strongly affected by the applied ac voltage. Concerning the origin of the two insulating layers, we discuss a completely surface-related mechanism assuming the formation of a metal-insulator diode and a combination of surface and internal barriers.
GdCo$_5$ may be considered as two sublattices - one of Gd and one of Co - whose magnetizations are in antiparallel alignment, forming a ferrimagnet. Substitution of nickel in the cobalt sublattice of GdCo$_5$ has been investigated to gain insight into how the magnetic properties of this prototype rare-earth/transition-metal magnet are affected by changes in the transition metal sublattice. Polycrystalline samples of GdCo$_{5-x}$Ni$_x$ for 0 $ leq x leq $ 5 were synthesized by arc melting. Structural characterization was carried out by powder x-ray diffraction and optical and scanning electron microscope imaging of metallographic slides, the latter revealing a low concentration of Gd$_2$(Co, Ni)$_7$ lamellae for $x leq 2.5$. Compensation - i.e. the cancellation of the opposing Gd and transition metal moments is observed for $1 leq x leq 3$ at a temperature which increases with Ni content; for larger $x$, no compensation is observed below 360 K. A peak in the coercivity is seen at $x approx 1$ at 10K coinciding with a minimum in the saturation magnetization. Density-functional theory calculations within the disordered local moment picture reproduce the dependence of the magnetization on Ni content and temperature. The calculations also show a peak in the magnetocrystalline anisotropy at similar Ni concentrations to the experimentally observed coercivity maximum.
Here we report the evolution of structural, magnetic and transport properties in MnBi$_{2-x}$Sb$_x$Te$_4$ (0$leq x leq$2) single crystals. MnSb$_2$Te$_4$, isostructural to MnBi$_2$Te$_4$, has the lattice parameters of textit{a}=4.2445(3)$AA$ and textit{c}=40.869(5)$AA$, respectively. With increasing Sb content in MnBi$_{2-x}$Sb$_x$Te$_4$, the textit{a}-lattice decreases linearly following the Vegards law while the textit{c}-lattice shows little compositional dependence. The textit{a}-lattice contraction occurs by reducing Mn-Te-Mn bond angle while Mn-Te bond length remains nearly constant. The anisotropic magnetic properties suggest an antiferromagnetic order below T$_N$=19,K for MnSb$_2$Te$_4$ with the magnetic moments aligned along the crystallographic textit{c}-axis. The antiferromagnetic ordering temperature slightly decreases from 24,K for MnBi$_2$Te$_4$ to 19,K for MnSb$_2$Te$_4$. More dramatic change was observed for the critical magnetic fields required for the spin-flop transition and moment saturation. With increasing Sb content, both critical fields decrease and in MnSb$_2$Te$_4$ a small field of 3,kOe is enough to saturate the moment. In high magnetic fields, the saturation moment shows significant suppression from 3.56$mu_B$/Mn for MnBi$_2$Te$_4$ to 1.57$mu_B$/Mn for MnSb$_2$Te$_4$. Data analyses suggest that both the interlayer magnetic interaction and single ion anisotropy decrease with increasing Sb content. The partial substitution of Bi by Sb also dramatically affects the transport properties. A crossover from n-type to p-type conducting behavior is observed around x=0.63. Our results show close correlation between structural, magnetic and transport properties in MnBi$_{2-x}$Sb$_x$Te$_4$ and that partial substitution of Bi by Sb is an effective approach to fine tuning both the magnetism and transport properties of MnBi$_{2-x}$Sb$_x$Te$_4$.
In the present work we demonstrate that in addition to the well-known colossal-dielectric-constant material CaCu3Ti4O12 also various members of the series Ln2/3Cu3Ti4O12 with Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm, exhibit giant values of the dielectric constant. Just as CaCu3Ti4O12, all these materials show a Maxwell-Wagner type relaxation process. For the best material, Pr2/3Cu3Ti4O12, we provide a detailed investigation of its dielectric properties in a broad frequency range up to 1 GHz. Polarization at internal barriers, most likely grain boundaries, seems to be the reason for the observed very high values of the dielectric constant. Taking into account the present results and those reported in literature
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