Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTemperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3
134
0
0.0
(
0
)
Added by
Ratnamala Chatterjee
Publication date
2014
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.
rate research
Read More
Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A^{2}_{1g} phonons shows similar behavior in both materials. The temperature dependence of the peak position and linewidth is analyzed considering the anharmonic decay of optical phonons and the material thermal expansion. This work suggests that Raman spectroscopy can be used for thermometry in Bi_2Se_3- and Sb_2Te_3-based devices in a wide temperature range.
We report temperature-dependent Raman spectra of CeFeAsO0.9F0.1 from 4 K to 300 K in spectral range of 60 to 1800 cm-1 and interpret them using estimates of phonon frequencies obtained from first-principles density functional calculations. We find evidence for a strong coupling between the phonons and crystal field excitations; in particular Ce3+ crystal field excitation at 432 cm-1 couples strongly with Eg oxygen vibration at 389 cm-1 . Below the superconducting transition temperature, the phonon mode near 280 cm-1 shows softening, signaling its coupling with the superconducting gap. The ratio of the superconducting gap to Tc thus estimated to be ~ 10 suggests CeFeAsO0.9F0.1 as a strong coupling superconductor. In addition, two high frequency modes observed at 1342 cm-1 and 1600 cm-1
We perform a comparative experimental and theoretical study of the temperature dependence up to 700 K of the frequency and linewidths of the graphite E1u and E2g optical phonons (~1590 and 1580 cm-1) by infra-red (IR) and Raman spectroscopy. Despite their similar character, the temperature dependence of the two modes is quite different, being, e.g., the frequency shift of the IR-active E1u mode is almost twice as big as that of the Raman active E2g mode. Ab initio calculations of the anharmonic properties are in remarkable agreement with measurements and explain the observed behavior.
We carried out micro-Raman spectroscopy of graphene layers over the temperature range from approximately 80 K to 370 K. The number of layers was independently confirmed by the quantum Hall measurements and atomic force microscopy. The measured values of the temperature coefficients for the G and 2D-band frequencies of the single-layer graphene are -0.016 1/(cm K) and -0.034 1/(cm K), respectively. The G peak temperature coefficient of the bi-layer graphene and bulk graphite are -0.015 1/(cm K) and -0.011 1/(cm K), respectively.
Time-resolved Raman spectroscopy has been applied to probe the anharmonic coupling and electron-phonon interaction of optical phonons in graphite. From the decay of the transient anti-Stokes scattering of the G-mode following ultrafast excitation, we measured a lifetime of 2.2+/-0.1ps for zone-center optical phonons. We also observed a transient stiffening of G-mode phonons, an effect attributed to the reduction of the electron-phonon coupling for high electronic temperatures.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
