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Effect of High Energy Heavy Ion Irradiation on c-axis Oriented MgB2 Films

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 Added by Goran Karapetrov
 Publication date 2002
  fields Physics
and research's language is English
 Authors R. J. Olsson




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We report on the transport, magnetization, and scanning tunneling spectroscopy measurements on c-axis oriented thin films of MgB2 irradiated with high energy heavy ions of uranium and gold. We find a slight shift in the irreversibility and upper critical field lines to higher temperatures after irradiation. In addition, we observe an increase in the critical current at high temperatures near Tc2 and only a small change at low temperatures. Furthermore, we find no evidence for the existence of anisotropic pinning induced by heavy ion irradiation in this material. Tunneling spectra in an irradiated sample show a double gap structure with a flat background and very low zero-bias conductance, behaving in much the same way as the pristine unirradiated sample.



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148 - S. D. Bu 2002
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.
397 - J.J. Tu 2001
Temperature dependent optical conductivities and DC resistivity of c-axis oriented superconducting (Tc = 39.6 K) MgB2 films (~ 450 nm) have been measured. The normal state ab-plane optical conductivities can be described by the Drude model with a temperature independent Drude plasma frequency of omega_{p,D}=13,600 +/- 100 cm-1 or 1.68 +/- 0.01 eV. The normal state resistivity is fitted by the Bloch-Gruneisen formula with an electron-phonon coupling constant lambda_{tr} = 0.13 +/- 0.02. The optical conductivity spectra below T_c of these films suggest that MgB2 is a multi-gap superconductor.
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
160 MeV Neon ion irradiation has been carried out on MgB2 polycrystalline pellets at various doses. There has not been any significant change in Tc except at the highest dose of 1x10^15 ions/cm^2. Increase in resistivity has been noticed. Resistivity data has been fitted with Bloch-Gruneisen function and the values of Debye temperature, residual resistivity and temperature coefficient of resistivity have been extracted for irradiated as well as unirradiated samples. The increase in the resistivity of irradiated samples has been explained in the light of damage in the 3D pi bonding network of B.
The London penetration depth was measured in optimally doped Ba0.6K0.4Fe2As2 crystals, with and without columnar defects produced by 1.4 GeV 208Pb irradiation. The low temperature behavior of unirradiated samples was consistent with a fully gapped superconducting state with a minimum energy gap delta_min/(k_B T_C) = 1. Similar gap values were observed for irradiation levels corresponding to mean column-column separations of 32 nm and 22 nm. At very high irradiation levels (column-column separation of 10 nm) a T^2 power law was observed below Tc/3, most likely due to elevated scattering. Neither the location nor the sharpness of the superconducting transition was affected by irradiation. The data provides evidence for an s+/- pairing state.
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