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Register a new userSynthesis and Properties of c-axis Oriented Epitaxial MgB2 Thin Films
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S. D. Bu
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We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.
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The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic field applications.
Temperature dependent optical conductivities and DC resistivity of c-axis oriented superconducting (Tc = 39.6 K) MgB2 films (~ 450 nm) have been measured. The normal state ab-plane optical conductivities can be described by the Drude model with a temperature independent Drude plasma frequency of omega_{p,D}=13,600 +/- 100 cm-1 or 1.68 +/- 0.01 eV. The normal state resistivity is fitted by the Bloch-Gruneisen formula with an electron-phonon coupling constant lambda_{tr} = 0.13 +/- 0.02. The optical conductivity spectra below T_c of these films suggest that MgB2 is a multi-gap superconductor.
We report on the transport, magnetization, and scanning tunneling spectroscopy measurements on c-axis oriented thin films of MgB2 irradiated with high energy heavy ions of uranium and gold. We find a slight shift in the irreversibility and upper critical field lines to higher temperatures after irradiation. In addition, we observe an increase in the critical current at high temperatures near Tc2 and only a small change at low temperatures. Furthermore, we find no evidence for the existence of anisotropic pinning induced by heavy ion irradiation in this material. Tunneling spectra in an irradiated sample show a double gap structure with a flat background and very low zero-bias conductance, behaving in much the same way as the pristine unirradiated sample.
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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