No Arabic abstract
In order to predict the more accurate shape information of the melt pool in Selective Laser Melting (SLM), a new finite element temperature field simulations model is proposed. The simulations use a new heat source model that takes into account the influence of the powder layout, the surface of the substrate and the changes in the thickness of the powder layer after fusion on the energy distribution. In order to construct this new heat source model, firstly an improved optimization method based on the gradient descent and the univariate search technique is proposed to simulate the powder layout, and then the laser beam propagation between the powder and the surface of the substrate is tracked and recorded to obtain the energy distribution. Finally, according to the distribution of laser energy between the powder layer and the surface of the substrate, the heat source model is divided into two parts: one is the surface of substrate heat source model being the Gaussian distribution, the other one is the powder layer heat source model-satisfying the Gaussian distribution on the horizontal plane, changes in the depth direction according to the functional relationship obtained by the fitting. In addition, the thickness change of the powder layer after fusion is analyzed, and is taken into account in the heat source model. The powder simulation results are compared with the powder scattering experiment results to verify the effectiveness of the powder model. Comparing the temperature field simulation with the experiment, the results show that the predicted molten pool width relative error is 6.4%, and the connect width error is 9.6%, which has better accuracy and verifies the validity of the temperature field simulation model.
With important application prospects, eutectic high entropy alloys have received extensive attention for their excellent strength and ductility in a large temperature range. The excellent casting characteristics of eutectic high entropy alloys make it possible to achieve well manufacturability of selective laser melting. For the first time, we have achieved crack-free eutectic high entropy alloy fabricated by selective laser melting, which has excellent mechanical properties in a wide temperature range of -196 degrees Celsius~760 degrees Celsius due to ultra-fine eutectic lamellar spacing of 150 ~ 200nm and lamellar colony of 2 ~ 6 {mu}m. Specifically, the room temperature tensile strength exceeds 1400MPa and the elongation is more than 20%, significantly improved compared with those manufactured by other techniques with lower cooling rate.
This article presents a new and individual way to generate opto-mechanical components by Additive Manufacturing, embedded in an established process chain for the fabrication of metal optics. The freedom of design offered by additive techniques gives the opportunity to produce more lightweight parts with improved mechanical stability. The latter is demonstrated by simulations of several models of metal mirrors with a constant outer shape but varying mass reduction factors. The optimized lightweight mirror exhibits $63.5 %$ of mass reduction and a higher stiffness compared to conventional designs, but it is not manufacturable by cutting techniques. Utilizing Selective Laser Melting instead, a demonstrator of the mentioned topological non-trivial design is manufactured out of AlSi12 alloy powder. It is further shown that -- like in case of a traditional manufactured mirror substrate -- optical quality can be achieved by diamond turning, electroless nickel plating, and polishing techniques, which finally results in $< 150$~nm peak-to-valley shape deviation and a roughness of $< 1$~nm rms in a measurement area of $140 times 110$ $mu$m${}^2$. Negative implications from the additive manufacturing are shown to be negligible. Further it is shown that surface form is maintained over a two year storage period under ambient conditions.
Solution-processed intrinsic ZnO and Al doped ZnO (ZnO:Al) were spin coated on textured n-type c-Si wafer to replace the phosphorus doped amorphous silicon as the electron selective transport layer (ESTL) of the Si heterojunction (SHJ) solar cells. Besides the function of electron selective transportation, the non-doped ZnO was found to possess certain passivation effect on c-Si wafer. The SHJ solar cells with different combinations of passivation layer (intrinsic a-Si:H, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO and ZnO:Al ) were fabricated and compared. An efficiency up to 18.46% was achieved on a SHJ solar cell with an a-Si:H/ZnO:Al double layer back structure. And, the all solution-processed non-doped ZnO/ZnO:Al combination layer presents fairly good electron selective transportation property for SHJ solar cell, resulting in an efficiency of 17.13%. The carrier transport based on energy band diagrams of the rear side of the solar cells has been discussed related to the performance of the SHJ solar cells.
The accurate calculation of laser energy absorption during femto- or picosecond laser pulse experiments is very important for the description of the formation of periodic surface structures. On a rough material surface, a crack or a step edge, ultrashort laser pulses can excite surface plasmon polaritons (SPP), i.e. surface plasmons coupled to a laser-electromagnetic wave. The interference of such plasmon wave and the incoming pulse leads to a periodic modulation of the deposited laser energy on the surface of the sample. In the present work, within the frames of a Two Temperature Model we propose the analytical form of the source term, which takes into account SPP excited at a step edge of a dielectric-metal interface upon irradiation of an ultrashort laser pulse at normal incidence. The influence of the laser pulse parameters on energy absorption is quantified for the example of gold. This result can be used for nanophotonic applications and for the theoretical investigation of the evolution of electronic and lattice temperatures and, therefore, of the formation of surfaces with predestined properties under controlled conditions.
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high reproducibility and precursor-free process. A Ge-Sn alloy with ~9 at.% Sn was shown to be feasible by this technique. However, the compressive strain, inherently occurring in heterogeneous epitaxy of the film, evidently delays the material from the direct bandgap transition. In this report, an attempt to synthesize a highly-relaxed Ge-Sn alloy will be presented. The idea is to produce a significantly thicker film with a higher implant energy and doses. X-ray reciprocal space mapping confirms that the material is largely-relaxed. The peak Sn concentration of the highest dose sample is 6 at.% as determined by Rutherford backscattering spectrometry. Cross-sectional transmission electron microscopy shows unconventional defects in the film as the mechanism for the strain relaxation. Finally, a photoluminescence (PL) study of the strain-relaxed alloys shows photon emission at a wavelength of 2045 nm, suggesting an active incorporation of Sn concentration of ~6 at.%. The results of this study pave way to produce high quality relaxed GeSn alloy using an industrially scalable method.