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We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching process, induced by an external magnetic field, is monitored by measuring the evolution of the in-plane magnetization. % We show that the remanent in-plane magnetization originates from the polarization of the Bloch-type DWs. With micromagnetic simulations, we reveal that the reversal of the DW polarization is the result of the emergence and collapse of horizontal Bloch lines within the DWs at particular strengths of the external magnetic field, applied opposite to the DW polarization. Our findings are relevant for DW-based magnonics and bubble skyrmion applications in magnetic multilayers.
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We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics.
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the axial anisotropy gradient generated by external electric field, allowing the electro control of AFM domain wall motion in the merit of ultra-low energy loss. The domain wall velocity depending on the anisotropy gradient magnitude and intrinsic material properties is simulated based on the Landau-Lifshitz-Gilbert equation and also deduced using the energy dissipation theorem. It is found that the domain wall moves at a nearly constant velocity for small gradient, and accelerates for large gradient due to the enlarged domain wall width. The domain wall mobility is independent of lattice dimension and types of domain wall, while it is enhanced by the Dzyaloshinskii-Moriya interaction. In addition, the physical mechanism for much faster AFM wall dynamics than ferromagnetic wall dynamics is qualitatively explained. This work unveils a promising strategy for controlling the AFM domain walls, benefiting to future AFM spintronic applications.
In this work, we propose helicity-dependent switching (HDS) of magnetization of Co/Pt for energy efficient optical receiver. Designing a low power optical receiver for optical-to-electrical signal conversion has proven to be very challenging. Current day receivers use a photodiode that produces a photocurrent in response to input optical signals, and power hungry trans-impedance amplifiers are required to amplify the small photocurrents. Here, we propose light helicity induced switching of magnetization to overcome the requirement of photodiodes and subsequent trans-impedance amplification by sensing the change in magnetization with a magnetic tunnel junction (MTJ). Magnetization switching of a thin ferromagnet layer using circularly polarized laser pulses have recently been demonstrated which shows one-to-one correspondence between light helicity and the magnetization state. We propose to utilize this phenomena by using digital input dependent circularly polarized laser pulses to directly switch the magnetization state of a thin Co/Pt ferromagnet layer at the receiver. The Co/Pt layer is used as the free layer of an MTJ, the resistance of which is modified by the laser pulses. With the one-to-one dependence between input data and output magnetization state, the MTJ resistance is directly converted to digital output signal. Our device to circuit level simulation results indicate that, HDS based optical receiver consumes only 0.124 pJ/bit energy, which is much lower than existing techniques.
The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the Neel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM) nano-ribbon. The depinning field depending on the notch dimension and intrinsic physical parameters are deduced and also numerically calculated. Contrary to conventional conception, it is revealed that the depinning field is remarkably dependent of the damping constant and the time-dependent oscillation of the domain wall position in the weakly damping regime benefits to the wall depinning, resulting in a gradual increase of the depinning field up to a saturation value with increasing damping constant. A one-dimensional model accounting of the internal dynamics of domain wall is used to explain perfectly the simulated results. It is demonstrated that the depinning mechanism of an AFM domain wall differs from ferromagnetic domain wall by exhibiting a depinning speed typically three orders of magnitude faster than the latter, suggesting the ultrafast dynamics of an AFM system.
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