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Register a new userUltrafast depinning of domain wall in notched antiferromagnetic nanostructures
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The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the Neel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM) nano-ribbon. The depinning field depending on the notch dimension and intrinsic physical parameters are deduced and also numerically calculated. Contrary to conventional conception, it is revealed that the depinning field is remarkably dependent of the damping constant and the time-dependent oscillation of the domain wall position in the weakly damping regime benefits to the wall depinning, resulting in a gradual increase of the depinning field up to a saturation value with increasing damping constant. A one-dimensional model accounting of the internal dynamics of domain wall is used to explain perfectly the simulated results. It is demonstrated that the depinning mechanism of an AFM domain wall differs from ferromagnetic domain wall by exhibiting a depinning speed typically three orders of magnitude faster than the latter, suggesting the ultrafast dynamics of an AFM system.
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In this work, we study the microwave field driven antiferromagnetic domain wall motion in an antiferromagnetic nanowire, using the numerical calculations based on a classical Heisenberg spin model. We show that a proper combination of a static magnetic field plus an oscillating field perpendicular to the nanowire axis is sufficient to drive the domain wall propagation along the nanowire with the axial magnetic anisotropy. More importantly, the drift velocity at the resonance frequency is comparable to that induced by temperature gradients, suggesting that microwave field can be a very promising tool to control domain wall motions in antiferromagnetic nanostructures. Furthermore, the dependences of resonance frequency and drift velocity on the static and oscillating fields, the axial anisotropy, and the damping constant are discussed in details. This work provides useful information for the spin dynamics in antiferromagnetic nanostructures for spintronics applications.
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the axial anisotropy gradient generated by external electric field, allowing the electro control of AFM domain wall motion in the merit of ultra-low energy loss. The domain wall velocity depending on the anisotropy gradient magnitude and intrinsic material properties is simulated based on the Landau-Lifshitz-Gilbert equation and also deduced using the energy dissipation theorem. It is found that the domain wall moves at a nearly constant velocity for small gradient, and accelerates for large gradient due to the enlarged domain wall width. The domain wall mobility is independent of lattice dimension and types of domain wall, while it is enhanced by the Dzyaloshinskii-Moriya interaction. In addition, the physical mechanism for much faster AFM wall dynamics than ferromagnetic wall dynamics is qualitatively explained. This work unveils a promising strategy for controlling the AFM domain walls, benefiting to future AFM spintronic applications.
We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90{deg} spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.
We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching process, induced by an external magnetic field, is monitored by measuring the evolution of the in-plane magnetization. % We show that the remanent in-plane magnetization originates from the polarization of the Bloch-type DWs. With micromagnetic simulations, we reveal that the reversal of the DW polarization is the result of the emergence and collapse of horizontal Bloch lines within the DWs at particular strengths of the external magnetic field, applied opposite to the DW polarization. Our findings are relevant for DW-based magnonics and bubble skyrmion applications in magnetic multilayers.
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187 (2017)]. One of the most essential issues for device design is searching for low-power-consuming and high-efficient methods of controlling domain wall. In this work, we propose to use the voltage-controlled magnetic anisotropy gradient as an excitation source to drive the domain wall motion in ferrimagnets. The ultrafast wall motion under the anisotropy gradient is predicted theoretically based on the collective coordinate theory, which is confirmed by the atomistic micromagnetic simulations. The antiferromagnetic spin dynamics is realized at the angular momentum compensation point, and the wall shifting has a constant speed under small gradient and can be slightly accelerated under large gradient due to the broadened wall width during the motion. For nonzero net angular momentum, the Walker breakdown occurs at a critical anisotropy gradient significantly depending on the second anisotropy and interfacial Dzyaloshinkii-Moriya interaction, which is highly appreciated for further experiments including the materials selection and device geometry design. More importantly, this work unveils a low-power-consuming method of controlling the domain wall in ferrimagnets, benefiting to future spintronic applications.
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