No Arabic abstract
Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize condensed superfluid and crystalline phases by suppressing both density and phase fluctuations. Although spectroscopic signatures of EIs have been reported, conclusive evidence for strongly correlated EI states has remained elusive. Here, we demonstrate a strongly correlated spatially indirect two-dimensional (2D) EI ground state formed in transition metal dichalcogenide (TMD) semiconductor double layers. An equilibrium interlayer exciton fluid is formed when the bias voltage applied between the two electrically isolated TMD layers, is tuned to a range that populates bound electron-hole pairs, but not free electrons or holes. Capacitance measurements show that the fluid is exciton-compressible but charge-incompressible - direct thermodynamic evidence of the EI. The fluid is also strongly correlated with a dimensionless exciton coupling constant exceeding 10. We further construct an exciton phase diagram that reveals both the Mott transition and interaction-stabilized quasi-condensation. Our experiment paves the path for realizing the exotic quantum phases of excitons, as well as multi-terminal exciton circuitry for applications.
We introduce the notion of the strongly correlated band insulator (SCI), where the lowest energy excitations are collective modes (excitons) rather than the single particles. We construct controllable 1/N expansion for SCI to describe their observables properties. A remarkable example of the SCI is bilayer graphene which is shown to be tunable between the SCI and usual weak coupling regime.
Half a century ago, Mott noted that tuning the carrier density of a semimetal towards zero produces an insulating state in which electrons and holes form bound pairs. It was later argued that such pairing persists even if a semiconducting gap opens in the underlying band structure, giving rise to what has become known as the strong coupling limit of an `excitonic insulator. While these `weak and `strong coupling extremes were subsequently proposed to be manifestations of the same excitonic state of electronic matter, the predicted continuity of such a phase across a band gap opening has not been realized experimentally in any material. Here we show the quantum limit of graphite, by way of temperature and angle-resolved magnetoresistance measurements, to host such an excitonic insulator phase that evolves continuously between the weak and strong coupling limits. We find that the maximum transition temperature T_EI of the excitonic phase is coincident with a band gap opening in the underlying electronic structure at B_0= 46 +/- 1 T, which is evidenced above T_EI by a thermally broadened inflection point in the magnetoresistance. The overall asymmetry of the observed phase boundary around B_0 closely matches theoretical predictions of a magnetic field-tuned excitonic insulator phase in which the opening of a band gap marks a crossover from predominantly momentum-space pairing to real-space pairing.
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
We study the manipulation of the photoelectron spin-polarization in Bi$_2$Se$_3$ by spin- and angle-resolved photoemission spectroscopy. General rules are established that enable controlling the spin-polarization of photoemitted electrons via light polarization, sample orientation, and photon energy. We demonstrate the $pm$100% reversal of a single component of the measured spin-polarization vector upon the rotation of light polarization, as well as a full three-dimensional manipulation by varying experimental configuration and photon energy. While a material-specific density-functional theory analysis is needed for the quantitative description, a minimal two-atomic-layer model qualitatively accounts for the spin response based on the interplay of optical selection rules, photoelectron interference, and topological surface-state complex structure. It follows that photoelectron spin-polarization control is generically achievable in systems with a layer-dependent, entangled spin-orbital texture.
The possibility to exploit quantum coherence to strongly enhance the efficiency of charge transport in solid state devices working at ambient conditions would pave the way to disruptive technological applications. In this work, we tackle the problem of the quantum transport of photogenerated electronic excitations subject to dephasing and on-site Coulomb interactions. We show that the transport to a continuum of states representing metallic collectors can be optimized by exploiting the superradiance phenomena. We demonstrate that this is a coherent effect which is robust against dephasing and electron-electron interactions in a parameters range that is compatible with actual implementation in few monolayers transition-metal-oxide (TMO) heterostructures.