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Register a new userNewly synthesized MAX phase Zr2SeC: DFT insights into physical properties towards possible applications
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A DFT study of the synthesized MAX phase Zr2SeC has been carried out for the first time to explore its physical properties for possible applications in many sectors. The studied properties are compared with prior known MAX phase Zr2SC. The structural parameters (lattice constants, volume, and atomic positions) are observed to be consistent with earlier results. The band structure and density of states (DOS) are used to explore the metallic conductivity, anisotropic electrical conductivity, and the dominant role of Zr-d states to the electrical conductivity. Analysis of the peaks in the DOS and charge density mapping (CDM) of Zr2SeC and Zr2SC revealed the possible variation of the mechanical properties and hardness among them. The mechanical stability has been checked using elastic constants. The values of the elastic constants, elastic moduli and hardness parameters of Zr2SeC are found to be lowered than those of Zr2SC. The anisotropic behavior of the mechanical properties has been studied and analyzed. Technologically important thermodynamic properties such as the thermal expansion coefficient, Debye temperature, entropy, heat capacity at constant volume, Gruneisen parameter along with volume and Gibbs free energy are investigated as a function of both temperature (0 to 1600 K) and pressure (0 to 50 GPa). Besides, the {Theta}D, minimum thermal conductivity (Kmin), melting point (Tm), and {gamma} have also been calculated at room temperature and found to be lowered for Zr2SeC compared to Zr2SC owing to their close relationship with the mechanical parameters. The value of the {Theta}D, Kmin, Tm, and TEC suggest Zr2SeC as a thermal barrier coating material. The dielectric constant (real and imaginary part), refractive index, extinction coefficient, absorption coefficient, photoconductivity, reflectivity, and loss function of Zr2SeC are computed and analyzed.
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Boron rich chalcogenides have been predicted to have excellent properties for optical and mechanical applications in recent times. In this regard, we report the electronic, optical and mechanical properties of recently synthesized boron rich chalcogenide compounds, B12X (X = S and Se) using density functional theory for the first time. The effects of exchange and correlation functional on these properties are also investigated. The consistency of the obtained crystal structure with the reported experimental results has been checked in terms of lattice parameters. The considered materials are mechanically stable, brittle and elastically anisotropic. Furthermore, the elastic moduli and hardness parameters are calculated, which show that B12S is likely to be a prominent member of hard materials family compared to B12Se. The origin of different in hardness is explained on the basis of density of states near the Fermi level. Reasonably good values of fracture toughness and machinability index for B12X (X= S and Se) are reported. The melting point, Tm for the B12S and B12Se compounds suggests that both solids are stable, at least up to 4208 and 3577 K, respectively. Indirect band gap of B12S (2.27 eV) and B12Se (1.30 eV) are obtained using the HSE06 functional.The electrons of B12Se compound show lighter average effective mass compared to that of B12S compound, which signifies higher mobility of charge carriers in B12Se. The optical properties are characterized using GGA-PBE and HSE06 method and discussed in detail. These compounds possess bulk optical anisotropy and excellent absorption coefficients in visible light region along with very low static value of reflectivity spectra (range: 7.42-14.0% using both functionals) are noted. Such useful features of the compounds under investigation show promise for applications in optoelectronic and mechanical sectors.
Chemical exfoliation of MAX phases into two-dimensional (2D) MXenes can be considered as a major breakthrough in the synthesis of novel 2D systems. To gain insight into the exfoliation possibility of MAX phases and to identify which MAX phases are promising candidates for successful exfoliation into 2D MXenes, we perform extensive electronic structure and phonon calculations, and determine the force constants, bond strengths, and static exfoliation energies of MAX phases to MXenes for 82 different experimentally synthesized crystalline MAX phases. Our results show a clear correlation between the force constants and the bond strengths. As the total force constant of an A atom contributed from the neighboring atoms is smaller, the exfoliation energy becomes smaller, thus making exfoliation easier. We propose 37 MAX phases for successful exfoliation into 2D Ti$_2$C, Ti$_3$C$_2$, Ti$_4$C$_3, $Ti$_5$C$_4$, Ti$_2$N, Zr$_2$C, Hf$_2$C, V$_2$C, V$_3$C$_2$, V$_4$C$_3$, Nb$_2$C, Nb$_5$C$_4$, Ta$_2$C, Ta$_5$C$_4$, Cr$_2$C, Cr$_2$N, and Mo$_2$C MXenes. In addition, we explore the effect of charge injection on MAX phases. We find that the injected charges, both electrons and holes, are mainly received by the transition metals. This is due to the electronic property of MAX phases that the states near the Fermi energy are mainly dominated by $d$ orbitals of the transition metals. For negatively charged MAX phases, the electrons injected cause swelling of the structure and elongation of the bond distances along the $c$ axis, which hence weakens the binding. For positively charged MAX phases, on the other hand, the bonds become shorter and stronger. Therefore, we predict that the electron injection by electrochemistry or gating techniques can significantly facilitate the exfoliation possibility of MAX phases to 2D MXenes.
In the present study, the structural, electronic, optical and thermoelectric properties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 with hexagonal symmetry (R-3m) have been studied using the first principles method. A very good agreement has been found between our results with the available experimental and theoretical ones. The studied materials are semiconducting in nature as confirmed from the electronic band structure and optical properties.The strong hybridizations among s orbitals of Na, In and Se atoms push the bottom of the conduction band downward resulting in a narrower band gap of NaInSe2 compared to that of NaInS2 compound. Different optical (dielectric function, photoconductivity, absorption coefficient, reflectivity, refractive index and loss function) and thermoelectric (Seebeck coefficient, electrical conductivity, power factor and thermal conductivity) properties of NaInX2 (X = S, Se) have been studied in detail for the first time. It is found that all these properties are significantly anisotropic due to the strongly layered structure of NaInX2 (X = S, Se). Strong optical absorption with sharp peaks is found in the far visible to mid ultraviolet (UV) regions while the reflectivity is low in the UV region for both the compounds. Such features indicate feasibility of applications in optoelectronic sector.The calculated thermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis are found to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively and the corresponding ZT values are ~0.70. The obtained thermal conductivity along a-axis for both compounds is high (~22 W/mK).This suggests that the reduction of such high thermal conductivity is important to achieve higher ZT values of the NaInX2(X = S, Se) compounds.
Boron nitride (BN) has been explored these days because of its extraordinary optical, chemical and mechanical properties. BN is sensitive to its crystal structure that slight change in lattice parameters enormously change its properties. Present study deals with synthesis, characterization as well as photocatalytic applications of BN-based composite. When boron nitride was mixed with SnO2 having tetragonal crystal structure, dissociation into smaller sheets occurred and the material oriented to (102) plane. SnO2 particles attached both sides of BN sheets provided high surface area which make the material suitable for catalytic process. Presence of large number of active sites leads to the formation of hydroxyl radicals in BN/SnO2 composite which helps during degradation of organic and colourless pollutants i.e. methyl orange dye up-to ~92% under 7 minutes and salicylic acid in 40 minutes to ~82%. Results suggested that BN/SnO2 composite material possesses good capability for use in environmental as well as industrial applications.
Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygen-containing groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.
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