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Register a new userNaInX2 (X = S, Se) layered materials for energy harvesting applications: First-principles insights into optoelectronic and thermoelectric properties
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Added by
Md. Mukter Hossain PhD
Publication date
2020
fields
Physics
and research's language is
English
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In the present study, the structural, electronic, optical and thermoelectric properties of two isostructural chalcogenide materials, NaInS2 and NaInSe2 with hexagonal symmetry (R-3m) have been studied using the first principles method. A very good agreement has been found between our results with the available experimental and theoretical ones. The studied materials are semiconducting in nature as confirmed from the electronic band structure and optical properties.The strong hybridizations among s orbitals of Na, In and Se atoms push the bottom of the conduction band downward resulting in a narrower band gap of NaInSe2 compared to that of NaInS2 compound. Different optical (dielectric function, photoconductivity, absorption coefficient, reflectivity, refractive index and loss function) and thermoelectric (Seebeck coefficient, electrical conductivity, power factor and thermal conductivity) properties of NaInX2 (X = S, Se) have been studied in detail for the first time. It is found that all these properties are significantly anisotropic due to the strongly layered structure of NaInX2 (X = S, Se). Strong optical absorption with sharp peaks is found in the far visible to mid ultraviolet (UV) regions while the reflectivity is low in the UV region for both the compounds. Such features indicate feasibility of applications in optoelectronic sector.The calculated thermoelectric power factors at 1000 K for NaInS2 and NaInSe2 along a-axis are found to be 151.5 micro Watt /cmK2 and 154 micro Watt/cmK2, respectively and the corresponding ZT values are ~0.70. The obtained thermal conductivity along a-axis for both compounds is high (~22 W/mK).This suggests that the reduction of such high thermal conductivity is important to achieve higher ZT values of the NaInX2(X = S, Se) compounds.
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Boron rich chalcogenides have been predicted to have excellent properties for optical and mechanical applications in recent times. In this regard, we report the electronic, optical and mechanical properties of recently synthesized boron rich chalcogenide compounds, B12X (X = S and Se) using density functional theory for the first time. The effects of exchange and correlation functional on these properties are also investigated. The consistency of the obtained crystal structure with the reported experimental results has been checked in terms of lattice parameters. The considered materials are mechanically stable, brittle and elastically anisotropic. Furthermore, the elastic moduli and hardness parameters are calculated, which show that B12S is likely to be a prominent member of hard materials family compared to B12Se. The origin of different in hardness is explained on the basis of density of states near the Fermi level. Reasonably good values of fracture toughness and machinability index for B12X (X= S and Se) are reported. The melting point, Tm for the B12S and B12Se compounds suggests that both solids are stable, at least up to 4208 and 3577 K, respectively. Indirect band gap of B12S (2.27 eV) and B12Se (1.30 eV) are obtained using the HSE06 functional.The electrons of B12Se compound show lighter average effective mass compared to that of B12S compound, which signifies higher mobility of charge carriers in B12Se. The optical properties are characterized using GGA-PBE and HSE06 method and discussed in detail. These compounds possess bulk optical anisotropy and excellent absorption coefficients in visible light region along with very low static value of reflectivity spectra (range: 7.42-14.0% using both functionals) are noted. Such useful features of the compounds under investigation show promise for applications in optoelectronic and mechanical sectors.
In this study, we perform a comparative theoretical study on the thermoelectric performance of materials with Cu$Ch_4$ ($Ch=$ S, Se) tetrahedra, including famous thermoelectric materials BiCuSeO and tetrahedrite Cu$_{12}$Sb$_4$S$_{13}$, by means of first-principles calculations. By comparing these electronic band structures, we find that many of these materials possess a Cu-$t_{2g}$ band structure consisting of quasi-one-dimensional band dispersions and the isotropic (two-dimensional for layered compounds) band dispersion near the valence-band edge. Therefore, the key factors for the thermoelectric performance are the anisotropy of the former band dispersion and the degeneracy of these two kinds of band dispersions. We also find that a large extension of the chalcogen orbitals often improves their thermoelectric performance by improving these two factors or by going beyond such a basic band structure through a large alternation of its shape. Such a large extension of the chalcogen orbitals might partially originate from the anisotropic Cu-$Ch$ bond geometry of a tetrahedron. Our study reveals interesting similarities and differences of materials with Cu$Ch_4$, which provides important knowledge for a future search of high-performance thermoelectric materials.
Lead and tin chalcogenides have been studied widely due to their promising thermoelectric (TE) properties. Further enhancement in their TE efficiency has been reported upon the reduction of the dimension, which is an important feature in modern device fabrications. Using density functional theory combined with the Semi-classical Boltzmann transport theory, we studied the structural, electronic and TE properties of two-dimensional (2D) MX (M = Sn, Pb; X = S, Te) monolayers. Spin-orbit coupling was found to have significant effects on their electronic structure, particularly for the heavy compounds. Structural optimization followed by phonon transport studies prevailed that the rectangular ({gamma}-) phase is energetically the most favorable for SnS and SnTe monolayers, whereas the square structure is found the most stable for PbS and PbTe monolayers. Our results are in good agreement with previous studies. These 2D materials exhibit high Seebeck coefficients and power factors along with low lattice thermal conductivities, which are essential features of good TE materials. The maximum figure of merits (ZT) of 1.04, 1.46, 1.51 and 1.94 are predicted for n-type SnS, SnTe, PBS and p-type PbTe monolayers respectively at 700 K, which are higher than their bulk ZT values. Hence, these monolayers are promising candidates for TE applications.
Transition metal dichalcogenides are rich in their structural phases, e.g. 1T-TaS2 and 1T-TaSe2 form charge density wave (CDW) under low temperature with interesting and exotic properties. Here, we present a systematic study of different structures in two-dimensional TaX2 (X=S, Se, Te) using density functional theory calculations with consideration of van der Waals interaction. All the normal phases present metal characteristics with various ground state and magnetic properties. The lattice reconstruction of CDW drastically affects the electronic and structural characteristics of 1T-TaS2 and 1T-TaSe2, leading to a transition from metal to insulator and an emergence of magnetic moment within periodic atomic clusters called the Star of David. The evaluated Heisenberg couplings indicate the weak ferromagnetic coupling between the clusters in monolayer. Furthermore, in bilayer commensurate CDW cases, we find intriguing phenomenon of the varying magnetic properties with different stacking orders. The magnetic moment in each layer disappears when two layers are coupled, but may sustain in certain stackings of interlayer antiferromagnetic configurations.
We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material. Concerning the electronic properties, in addition to the band structure, we show that the Zn (Sb) crystallographically equivalent atoms are not exactly equivalent from the electronic point of view. Lattice dynamics, elastic and thermodynamic properties are found to be in good agreement with experiments and they confirm the non equivalency of the zinc and antimony atoms from the vibrational point of view. The calculated elastic properties show a relatively weak anisotropy and the hardest direction is the y direction. We observe the presence of low energy modes involving both Zn and Sb atoms at about 5-6 meV, similarly to what has been found in Zn4Sb3 and we suggest that the interactions of these modes with acoustic phonons could explain the relatively low thermal conductivity of ZnSb. Zinc vacancies are the most stable defects and this explains the intrinsic p-type conductivity of ZnSb.
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