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Register a new userPhysical properties and device applications of graphene oxide
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Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygen-containing groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.
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Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS2 , WS2 , MoSe2 and WSe2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.
The study of the interaction between graphene oxide and arsenic is of great relevance towards the development of adsorbent materials and as a way to understand how these two materials interact in the environment. In this work we show that As(III) adsorption, primarily H3AsO3, by graphene oxide is dependent on its degree of oxidation. Variations in the concentration of potassium permanganate resulted in an increase on the C/O ratio from 1.98 to 1.35 with C-OH and C-O-C concentrations of 18 and 32%, respectively. Three oxidation degrees were studied, the less oxidized material reached a maximum As(III) adsorption capacity of 124 mg/g, whereas the graphene with the highest degree of oxidation reached a value of 288 mg/g at pH 7, to the authors knowledge, the highest reported in the literature. The interaction between graphene oxide and As(III) was also studied by Density Functional Theory (DFT) computer models showing that graphene oxide interacts with As(III) primarily through hydrogen bonds, having interaction energies with the hydroxyl and epoxide groups of 378 and 361 kcal/mol, respectively. Finally, cytotoxicity tests showed that the graphene oxide had a cellular viability of 57% with 50 {mu}g/ml, regardless of its degree of oxidation.
Some highly ordered compounds of graphene oxide (GO), e.g., the so-called clamped and unzipped GO, are shown to have piezoelectric responses via first-principles density functional calculations. By applying an electric field perpendicular to the GO basal plane, the largest value of in-plane strain and strain piezoelectric coefficient, d31 are found to be 0.12% and 0.24 pm/V, respectively, which are comparable with those of some advanced piezoelectric materials. An in-depth molecular structural analysis reveals that deformation of the oxygen doping regions in the clamped GO dominates its overall strain output, whereas deformation of the regions without oxygen dopant in the unzipped GO determines its overall piezoelectric strain. This understanding explains the observed dependence of d31 on oxygen doping rate, i.e., higher oxygen concentration giving rise to a larger d31 in the clamped GO whereas leading to a reduced d31 in the unzipped GO. As the thinnest two-dimensional piezoelectric materials, GO has a great potential for a wide range of MEMS/NEMS actuators and sensors.
Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl$_3$ is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of detectors with high gain and responsivity. In this work we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse in these materials, their performance and possible future paths of investigation.
High finesse optical cavities of current interferometric gravitational-wave detectors are significantly limited in sensitivity by laser quantum noise and coating thermal noise. The thermal noise is associated with internal energy dissipation in the materials that compose the test masses of the interferometer. Our understanding of how the internal friction is linked to the amorphous material structure is limited due to the complexity of the problem and the lack of studies that span over a large range of materials. We present a systematic investigation of amorphous metal oxide and Ta$_2$O$_5$-based mixed oxide coatings to evaluate their suitability for low Brownian noise experiments. It is shown that the mechanical loss of metal oxides is correlated to their amorphous morphology, with continuous random network materials such as SiO$_2$ and GeO$_2$ featuring the lowest loss angles. We evaluated different Ta$_2$O$_5$-based mixed oxide thin films and studied the influence of the dopant in the optical and elastic properties of the coating. We estimated the thermal noise associated with high-reflectance multilayer stacks that employ each of the mixed oxides as the high index material. We concluded that the current high index material of TiO$_2$-doped Ta$_2$O$_5$ is the optimal choice for reduced thermal noise among Ta$_2$O$_5$-based mixed oxide coatings with low dopant concentrations.
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