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The traditional theory of magnetic moments for chiral phonons is based on the picture of the circular motion of the Born effective charge, typically yielding a small fractional value of the nuclear magneton. Here we investigate the adiabatic evolution of electronic states induced by lattice vibration of a chiral phonon and obtain an electronic orbital magnetization in the form of a topological second Chern form. We find that the traditional theory needs to be refined by introducing a $bm{k}$ resolved Born effective charge, and identify another contribution from the phonon-modified electronic energy together with the momentum-space Berry curvature. The second Chern form can diverge when there is a Yangs monopole near the parameter space of interest as illustrated by considering a phonon at the Brillouin zone corner in a gaped graphene model. We also find large magnetic moments for the optical phonon in bulk topological materials where non-topological contribution is also important. The magnetic moment experiences a sign change when the band inversion happens.
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We investigated the magnetoterahertz response of the Dirac semimetal Cd$_3$As$_2$ and observed a particularly low frequency optical phonon, as well as a very prominent and field sensitive cyclotron resonance. As the cyclotron frequency is tuned with field to pass through the phonon, the phonon become circularly polarized as shown by a notable splitting in their response to right- and left-hand polarized light. This splitting can be expressed as an effective phonon magnetic moment that is approximately 2.7 times the Bohr magneton, which is almost four orders of magnitude larger than ab initio calculations predict for phonon magnetic moments in nonmagnetic insulators. This exceedingly large value is due to the coupling of the phonons to the cyclotron motion and is controlled directly by the electron-phonon coupling constant. This field tunable circular-polarization selective coupling provides new functionality for nonlinear optics to create light-induced topological phases in Dirac semimetals.
We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels.
Bloch states of electrons in honeycomb two-dimensional crystals with multi-valley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature. In crystals with two degenerate valleys, a perpendicular magnetic field lifts the valley degeneracy via a Zeeman effect due to these magnetic moments, leading to magnetoelectric effects which can be leveraged for creating valleytronic devices. In this work, we demonstrate that trilayer graphene with Bernal stacking, (ABA TLG) hosts topological magnetic moments with a large and widely tunable valley g-factor, reaching a value 500 at the extreme of the studied parametric range. The reported experiment consists in sublattice-resolved scanning tunneling spectroscopy under perpendicular electric and magnetic fields that control the TLG bands. The tunneling spectra agree very well with the results of theoretical modelling that includes the full details of the TLG tight-binding model and accounts for a quantum-dot-like potential profile formed electrostatically under the scanning tunneling microscope tip. Our results show that ABA TLG is a compelling quantum material platform.
Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from ferromagnetic state to canted antiferromagnetic state induces a topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Our work provides an efficient means for modulating topological quantum states and topological quantum phase transitions.
Introducing magnetism into topological insulators breaks time-reversal symmetry, and the magnetic exchange interaction can open a gap in the otherwise gapless topological surface states. This allows various novel topological quantum states to be generated, including the quantum anomalous Hall effect (QAHE) and axion insulator states. Magnetic doping and magnetic proximity are viewed as being useful means of exploring the interaction between topology and magnetism. However, the inhomogeneity of magnetic doping leads to complicated magnetic ordering and small exchange gaps, and consequently the observed QAHE appears only at ultralow temperatures. Therefore, intrinsic magnetic topological insulators are highly desired for increasing the QAHE working temperature and for investigating topological quantum phenomena further. The realization and characterization of such systems are essential for both fundamental physics and potential technical revolutions. This review summarizes recent research progress in intrinsic magnetic topological insulators, focusing mainly on the antiferromagnetic topological insulator MnBi2Te4 and its family of materials.
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