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Register a new userMagnetization-tuned topological quantum phase transition in MnBi2Te4 devices
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Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion insulator state, high-Chern-number and high-temperature Chern insulator states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by around 40-60 degrees, the Hall resistance deviates from the quantization value and a colossal, anisotropic magnetoresistance is detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from ferromagnetic state to canted antiferromagnetic state induces a topological quantum phase transition from Chern insulator to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Our work provides an efficient means for modulating topological quantum states and topological quantum phase transitions.
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We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels.
The interplay between band topology and magnetic order could generate a variety of time-reversal-breaking gapped topological phases with exotic topological quantization phenomena, such as quantum anomalous Hall (QAH) insulators and axion insulators (AxI). Here by combining analytic models and first-principles calculations, we predict QAH and AxI phases can be realized in thin film of an intrinsic antiferromagnetic van der Waal material Mn$_2$Bi$_2$Te$_5$. The phase transition between QAH and AxI is tuned by the layer magnetization, which would provide a promising platform for chiral superconducting phases. We further present a simple and unified continuum model that captures the magnetic topological features, and is generic for Mn$_2$Bi$_2$Te$_5$ and MnBi$_2$Te$_4$ family materials.
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific spin sub-band configurations. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related metal-to-insulator QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs, namely the spontaneous magnetization owning to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultra-thin films. The modulation of topology and magnetism through structural engineering may provide a useful guidance for the pursuit of QAH-based new phase diagrams and functionalities.
Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $pi$-jump in the junction phase with increasing in-plane magnetic field, ${bf B}_|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${bf B}_|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.
Topological insulators are expected to be a promising platform for novel quantum phenomena, whose experimental realizations require sophisticated devices. In this Technical Review, we discuss four topics of particular interest for TI devices: topological superconductivity, quantum anomalous Hall insulator as a platform for exotic phenomena, spintronic functionalities, and topological mesoscopic physics. We also discuss the present status and technical challenges in TI device fabrications to address new physics.
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