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Register a new userControlling the TiN electrode work function at the atomistic level: a first principles investigation
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The paper reports on a theoretical description of work function of TiN, which is one of the most used materials for the realization of electrodes and gates in CMOS devices. Indeed, although the work function is a fundamental quantity in quantum mechanics and also in device physics, as it allows the understanding of band alignment at heterostructures and gap states formation at the metal/semiconductor interface, the role of defects and contaminants is rarely taken into account. Here, by using first principles simulations, we present an extensive study of the work function dependence on nitrogen vacancies and surface oxidation for different TiN surface orientations. The results complement and explain a number of existent experimental data, and provide a useful tool to tailoring transport properties of TiN electrodes in device simulations.
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Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the ideal tensile and shear strengths of Cu/TiN and Al/TiN interfaces are calculated. While there is a strong orientation relation (OR) preference for Al/TiN interface, there is no OR preference for Cu/TiN interface. Both the ideal tensile and shear strengths of Cu/TiN interfaces are lower than those of bulk Cu and TiN, suggesting such interfaces are weaker than their bulk components. By comparison, the ideal strengths of Al/TiN interface are comparable to the constituents in the bulk form. Such contrasting interfaces can be a test-bed for studying the role of interfaces in determining the mechanical behavior of the nanolayered structures.
Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25%$ and $12.5%$ under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for $x=6.25%$ that non-hybridized Mn-3$d$ levels and Mn-induced states reside about 5 and 0.4 eV below the Fermi energy, respectively. For elevated pressures, the Mn-3$d$ levels, Mn-induced states, and the Fermi level shift towards higher energies, however, the position of the Mn-induced states relative to the Fermi energy remains constant due to hybridization of the Mn-3$d$ levels with the valence As-4$p$ orbitals. We also evaluate, employing Monte Carlo simulations, the Curie temperature ($T_{{rm C}}$). At zero pressure, we obtain $T_{{rm C}}=181$K, whereas the pressure-induced changes in $T_{{rm C}}$ are d$T_{{rm C}}$/d$p=+4.3$K/GPa for $x=12.5%$ and an estimated value of d$T_{{rm C}}$/d$papprox+2.2$K/GPa for $x=6.25%$ under pressures up to 6 GPa. The determined values of d$T_{{rm C}}$/d$p$ compare favorably with d$T_{{rm C}}$/d$p=+$(2-3) K/GPa at $pleq1.2$GPa found experimentally and estimated within the $p$-$d$ Zener model for Ga$_{0.93}$Mn$_{0.07}$As in the regime where hole localization effects are of minor importance [M. Gryglas-Borysiewicz $et$ $al$., Phys. Rev. B ${bf 82}$, 153204 (2010)].
Different stoichiometric configurations of graphane and graphene fluoride are investigated within density functional theory. Their structural and electronic properties are compared, and we indicate the similarities and differences among the various configurations. Large differences between graphane and graphene fluoride are found that are caused by the presence of charges on the fluorine atoms. A new configuration that is more stable than the boat configuration is predicted for graphene fluoride. We also perform GW calculations for the electronic band gap of both graphene derivatives. These band gaps and also the calculated Youngs moduli are at variance with available experimental data. This might indicate that the experimental samples contain a large number of defects or are only partially covered with H or F.
We have performed scanning tunneling microscope (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer Graphene (BLG) on SiC(0001) substrate to investigate the dependence of the electronic structures on Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the ${pi}$ bands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with appropriate selection of both the substrate and deposited material.
We present a computationally efficient general first-principles based method for spin-lattice simulations for solids. Our method is based on a combination of atomistic spin dynamics and molecular dynamics, expressed through a spin-lattice Hamiltonian where the bilinear magnetic term is expanded to second order in displacement, and all parameters are computed using density functional theory. The effect of first-order spin-lattice coupling on the magnon and phonon dispersion in bcc Fe is reported as an example, and is seen to be in good agreement with previous simulations performed with an empirical potential approach. In addition, we also illustrate the abilities of our method on a more conceptual level, by exploring dissipation-free spin and lattice motion in small magnetic clusters (a dimer, trimer and quadmer). Our method opens the door for quantitative description and understanding of the microscopic origin of many fundamental phenomena of contemporary interest, such as ultrafast demagnetization, magnetocalorics, and spincaloritronics.
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