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Register a new userTemporal characterisation of silicon sensors on Timepix3 ASICs
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The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 times 10^{15} 1 mathrm{,Mekern -0.1em V} mathrm{ ,n_{eq}} {mathrm{ ,cm}}^{-2}$. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.
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This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
In June 2008 single-sided silicon strip sensors with 50 $mu$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip width and the number of intermediate strips. The experimental setup and first results for the spatial resolution are discussed.
Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
With the ultimate goal of developing a pixel-based readout for a TPC at the ILC, a GridPix readout system consisting of one Timepix3 chip with an integrated amplification grid was embedded in a prototype detector. The performance was studied in a testbeam with 2.5 GeV electrons at the ELSA accelerator in Bonn. The error on the track position measurement both in the drift direction and in the readout plane is dominated by diffusion. Systematic uncertainties are limited to below 10 $mu$m. The GridPix can detect single ionization electrons with high efficiency, which allows for energy loss measurements and particle identification. From a truncated sum, an energy loss (dE/dx) resolution of 4.1% is found for an effective track length of 1 m. Using the same type of chips, a Quad module was developed that can be tiled to cover a TPC readout plane at the ILC. Simulation studies show that a pixel readout can improve the momentum resolution of a TPC at the ILC by about 20%.
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