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Register a new userNanocrystalline equiatomic CoCrFeNi alloy thin films: Are they single phase fcc?
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The bulk quaternary equiatomic CoCrFeNi alloy is studied extensively in literature. Under experimental conditions, it shows a single-phase fcc structure and its physical and mechanical properties are similar to those of the quinary equiatomic CoCrFeMnNi alloy. Many studies in literature have focused on the mechanical properties of bulk nanocrystalline high entropy alloys or compositionally complex alloys, and their microstructure evolution upon annealing. The thin film processing route offers an excellent alternative to form nanocrystalline alloys. Due to the high nucleation rate and high density of defects in thin films synthesized by sputtering, the kinetics of microstructure evolution is often accelerated compared to those taking place in the bulk. Here, thin films are used to study the phase evolution in nanocrystalline CoCrFeNi deposited on Si/SiO 2 and c-sapphire substrates by magnetron cosputtering from elemental sources. The phases and microstructure of the films are discussed in comparison to the bulk alloy. The main conclusion is that second phases can form even at room temperature provided there are sufficient nucleation sites.
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We have measured the transformation of pseudomorphic Ni films on Pd(100) into their bulk fcc phase as a function of the film thickness. We made use of x-ray diffraction and x-ray induced photoemission to study the evolution of the Ni film and its interface with the substrate. The growth of a pseudomorphic film with tetragonally strained face centered symmetry (fct) has been observed by out-of-plane x-ray diffraction up to a maximum thickness of 10 Ni layers (two of them intermixed with the substrate), where a new fcc bulk-like phase is formed. After the formation of the bulk-like Ni domains, we observed the pseudomorphic fct domains to disappear preserving the number of layers and their spacing. The phase transition thus proceeds via lateral growth of the bulk-like phase within the pseudomorphic one, i.e. the bulk-like fcc domains penetrate down to the substrate when formed. This large depth of the walls separating the domains of different phases is also indicated by the strong increase of the intermixing at the substrate-film interface, which starts at the onset of the transition and continues at even larger thickness. The bulk-like fcc phase is also slightly strained; its relaxation towards the orthomorphic lattice structure proceeds slowly with the film thickness, being not yet completed at the maximum thickness presently studied of 30 Angstrom (i.e. about 17 layers).
In this paper we report the deposition of epitaxial thin films of Nd1-xSrxCoO3 with x=0, 0.2 and 0.5 on single crystalline substrates (SrTiO3 and LaAlO3) carried out by means of rf-magnetron sputtering. The deposited films are all completely oriented and epitaxial and characterized by a nanocrystalline morphology. As-deposited films have an average roughness around 1 nm while after the thermal treatment this increases up to 20 nm while preserving the nanocrystalline morphology. All the films deposited on SrTiO3 have shown to be under a certain degree of tensile strain while those on the LaAlO3 experience a compressive strain thus suggesting that at about 50 nm the films are not fully relaxed, even after the thermal treatment. For the x=0.2 composition three different thickness have been investigated revealing an increased strain for the thinner films.
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we report the first experimental evidence for spin gapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior is also confirmed by first principles band structure calculations. The most stable configuration obtained by the theoretical calculation is verified by experiment. The alloy is found to crystallize in the cubic Heusler structure (LiMgPdSn type) with some amount of disorder and has a saturation magnetization of 3.7 Bohrs magneton/f.u.. and Curie temperature of 620 K. The saturation magnetization is found to follow the Slater-Pauling behavior, one of the prerequisites for SGS. Nearly temperature-independent carrier concentration and electrical conductivity is observed from 5 to 300 K. An anomalous Hall coefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflection data has yielded the current spin polarization value of 0.64, which is found to be robust against the structural disorder. All these properties are quite promising for the spintronic applications such as spin injection and can bridge a gap between the contrasting behavior of half-metallic ferromagnets and semiconductors.
We report on a systematic comparative study of the spin Hall efficiency between highly face-centered cubic (fcc)-textured Pt-Al alloy films grown on MgO(001) and poorly-crystallized Pt-Al alloy films grown on SiO$_2$. Using CoFeB as the detector, we show that for Al compositions centering around $x = 25$, mainly L1$_{2}$ ordered Pt$_{100-x}$Al$_x$ alloy films grown on MgO exhibit outstanding charge-spin conversion efficiency. For Pt$_{78}$Al$_{22}$/CoFeB bilayer on MgO, we obtain damping-like spin Hall efficiency as high as $xi_textrm{DL} sim +0.20$ and expect up to seven-fold reduction of power consumption compared to the polycrystalline bilayer of the same Al composition on SiO$_2$. This work demonstrates that improving the crystallinity of fcc Pt-based alloys is a crucial step for achieving large spin Hall efficiency and low power consumption in this material class.
In this paper, we investigate CoFeCrAl alloy by means of various experimental techniques and ab-initio calculations to look for half-metallic nature. The alloy is found to exist in the cubic Heusler structure, with presence of B2 ordering. Saturation magnetization (MS) value of about 2 Bohr magneton/f.u. is observed at 8 K under ambient pressure, which is in good agreement with the Slater-Pauling rule. MS values are found to be independent of pressure, which is a prerequisite for half-metals. The ab-initio electronic structure calculations predict half-metallic nature for the alloy with a spin slitting energy of 0.31 eV. Importantly, this system shows a high current spin polarization value of 0.67 [with error of 0.02], as deduced from the point contact Andreev reflection (PCAR) measurements. Linear dependence of electrical resistivity with temperature indicates the possibility of reasonably high spin polarization at elevated temperatures (~150 K) as well. All these suggest that CoFeCrAl is a promising material for the spintronic devices.
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