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Register a new userInvestigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
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The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$delta$ = 9.9 $cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.
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Systems with low mechanical dissipation are extensively used in precision measurements such as gravitational wave detection, atomic force microscopy and quantum control of mechanical oscillators via opto- and electromechanics. The mechanical quality factor ($Q$) of these systems determines the thermomechanical force noise and the thermal decoherence rate of mechanical quantum states. While the dissipation rate is typically set by the bulk acoustic properties of the material, by exploiting dissipation dilution, mechanical $Q$ can be engineered through geometry and increased by many orders of magnitude. Recently, soft clamping in combination with strain engineering has enabled room temperature quality factors approaching one billion ($10^9$) in millimeter-scale resonators. Here we demonstrate a new approach to soft clamping which exploits vibrations in the perimeter of polygon-shaped resonators tethered at their vertices. In contrast to previous approaches, which rely on cascaded elements to achieve soft clamping, perimeter modes are soft clamped due to symmetry and the boundary conditions at the polygon vertices. Perimeter modes reach $Q$ of 3.6 billion at room temperature while spanning only two acoustic wavelengths---a 4-fold improvement over the state-of-the-art mechanical $Q$ with 10-fold smaller devices. The small size of our devices makes them well-suited for near-field integration with microcavities for quantum optomechanical experiments. Moreover, their compactness allows the realization of phononic lattices. We demonstrate a one-dimensional Su-Schrieffer-Heeger chain of high-$Q$ perimeter modes coupled via nearest-neighbour interaction and characterize the localized edge modes.
We perform an experimental and numerical study of dielectric loss in superconducting microwave resonators at low temperature. Dielectric loss, due to two-level systems, is a limiting factor in several applications, e.g. superconducting qubits, Josephson parametric amplifiers, microwave kinetic-inductance detectors, and superconducting single-photon detectors. Our devices are made of disordered NbN, which, due to magnetic-field penetration, necessitates 3D finite-element simulation of the Maxwell--London equations at microwave frequencies to accurately model the current density and electric field distribution. From the field distribution, we compute the geometric filling factors of the lossy regions in our resonator structures and fit the experimental data to determine the intrinsic loss tangents of its interfaces and dielectrics. We emphasise that the loss caused by a spin-on-glass resist such as hydrogen silsesquioxane (HSQ), used for ultrahigh lithographic resolution relevant to the fabrication of nanowires, and find that, when used, HSQ is the dominant source of loss, with a loss tangent of $delta^i_{HSQ} = 8 times 10^{-3}$.
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of loss, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Lastly, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
Controlling the strain in two-dimensional materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by laser-oxidation of nano-drumhead resonators made out of tantalum diselenide (TaSe2), a layered 2D material belonging to the metal dichalcogenides. Prior to the study of their mechanical properties with a laser interferometer, we checked the oxidation and crystallinity of the freely-suspended tantalum oxide in a high-resolution electron microscope. We show that the stress of tantalum oxide resonators increase by 140 MPa (with respect to pristine TaSe2 resonators) which causes an enhancement of quality factor (14 times larger) and resonance frequency (9 times larger) of these resonators.
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