No Arabic abstract
The spatial collection efficiency portrays the driving forces and loss mechanisms in photovoltaic and photoelectrochemical devices. It is defined as the fraction of photogenerated charge carriers created at a specific point within the device that contribute to the photocurrent. In stratified planar structures, the spatial collection efficiency can be extracted out of photocurrent action spectra measurements empirically, with few a priori assumptions. Although this method was applied to photovoltaic cells made of well-understood materials, it has never been used to study unconventional materials such as metal-oxide semiconductors that are often employed in photoelectrochemical cells. This perspective shows the opportunities that this method has to offer for investigating new materials and devices with unknown properties. The relative simplicity of the method, and its applicability to operando performance characterization, makes it an important tool for analysis and design of new photovoltaic and photoelectrochemical materials and devices.
Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the performance of future experiments. We present here a new technique to characterize CCE in back-illuminated CCDs based on soft X-rays. This technique is used to characterize two different detector designs. The results demonstrate the importance of the backside processing for detection near threshold, showing that a recombination layer of a few microns significantly distorts the low energy spectrum. The studies demonstrate that the region of partial charge collection can be reduced to less than 1 micrometer thickness with adequate backside processing.
We present a multijunction detailed balance model that includes the effects of luminescent coupling, light trapping and nonradiative recombination, suitable for treatment of multijunction solar cells and photonic power converters -- photovoltaic devices designed to convert narrow-band light. The model includes both specular and Lambertian reflections using a ray-optic formalism and treats nonradiative processes using an internal radiative efficiency. Using this model, we calculate and optimize the efficiency of multijunction photonic power converters for a range of material qualities and light-trapping schemes. Multijunction devices allow increased voltage with lower current, decreasing series resistance losses. We show that efficiency increases significantly with increased number of junctions, even without series resistance, when the device has an absorbing substrate. Such an increase does not occur when the device has a back reflector. We explain this effect using a simplified model, which illustrates the origin of the decreased radiative losses in multijunction devices on substrates.
Infrared absorption spectra of SrTiO$_3$ have been measured under above-band-gap photoexcitations to study the properties of photogenerated carriers, which should play important roles in previously reported photoinduced phenomena in SrTiO$_3$. A broad absorption band appears over the entire mid-infrared region under photoexcitation. Detailed energy, temperature, and excitation power dependences of the photoinduced absorption are reported. This photo-induced absorption is attributed to the intragap excitations of the photogenerated carriers. The data show the existence of a high density of in-gap states for the photocarriers, which extends over a wide energy range starting from the conduction and valence band edges.
At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.
The efficiency of solution-processed colloidal quantum dot (QD) based solar cells is limited by poor charge transport in the active layer of the device, which originates from multiple trapping sites provided by QD surface defects. We apply a recently developed ultrafast electro-optical technique, pump-push photocurrent spectroscopy, to elucidate the charge trapping dynamics in PbS colloidal-QD photovoltaic devices at working conditions. We show that IR photo-induced absorption of QD in the 0.2-0.5 eV region is partly associated with immobile charges, which can be optically de-trapped in our experiment. Using this absorption as a probe, we observe that the early trapping dynamics strongly depend on the nature of the ligands used for QD passivation while it depends only slightly on the nature of the electron-accepting layer. We find that weakly bound states, with a photon-activation energy of 0.2 eV, are populated instantaneously upon photoexcitation. This indicates that the photogenerated states show an intrinsically bound-state character, arguably similar to charge-transfer states formation in organic photovoltaic materials. Sequential population of deeper traps (activation energy 0.3-0.5 eV) is observed on the ~0.1-10 ns time scales, indicating that most of carrier trapping occurs only after substantial charge relaxation/transport. The reported study disentangles fundamentally different contributions to charge trapping dynamics in the nanocrystal-based optoelectronic devices and can serve as a useful tool for QD solar cell development.