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Register a new userTemperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers
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This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well as experimental findings. A microscopic theory is applied to discuss band bending effects giving rise to the characteristic blue shift with increasing charge carrier density observed in type-II heterostructures. Furthermore, gain spectra for a W-quantum well heterostructure are calculated up to high charge carrier densities. At these high charge carrier densities, the interplay between multiple type-II transitions results in broad and flat gain spectra with a spectral width of approximately 160 nm. Furthermore, the temperature-dependent properties of broad-area edge-emitting lasers are analyzed using electroluminescence as well as laser characteristic measurements. A first indication for the theoretically predicted broad gain spectra is presented and the interplay between the temperature-dependent red shift and the charge carrier density-dependent blue shift is discussed. A combination of these effects results in a significant reduction of the temperature-induced red shift of the emission wavelengths and even negative shift rates of (-0.10 plusminus 0.04) nm/K are achieved.
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The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates for improved homogeneity while the growth process is carried out in a single run for an improved quality. Furthermore, the optical confinement factor is increased by increasing the aluminum concentration within the cladding layers to a value of 65%. The procedure is carried out for devices with emission wavelengths of 1.26 micrometer as well as 1.30 micrometer. Differential efficiencies as high as 58% and threshold current densities as low as 0.16 kA/cm^2 are observed in case of devices emitting at 1.26 micrometer at room temperature. Furthermore, excellent characteristic temperatures of T_0=(72 plus minus 5)K and T_1=(293 plus minus 16) K are recorded in the temperature range between 10 degree Celsius and 100 degree Celsius. Devices emitting at 1.30 micrometer exhibit differential efficiencies of 31% and threshold current densities of 0.50 kA/cm^2 at room temperature. Further improvements of these properties and wavelength extension schemes are briefly discssused.
In contrast to conventional structures, efficient non-radiative carrier recombination counteracts the appearance of optical gain in graphene. Based on a microscopic and fully quantum-mechanical study of the coupled carrier, phonon, and photon dynamics in graphene, we present a strategy to obtain a long-lived gain: Integrating graphene into a photonic crystal nanocavity and applying a high-dielectric substrate gives rise to pronounced coherent light emission suggesting the design of graphene-based laser devices covering a broad spectral range.
Although nanolasers typically have low Q-factors and high lasing thresholds, they have been successfully implemented with various gain media. Intuitively, it seems that an increase in the gain coefficient would improve the characteristics of nanolasers. For a plasmonic nanolaser, in particular, a distributed-feed-back (DFB) laser, we propose a self-consistent model that takes into account both spontaneous emission and the multimode character of laser generation to show that for a given pumping strength, the gain coefficient has an optimal value at which the radiation intensity is at a maximum and the radiation linewidth is at a minimum.
We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling u =1 as a function of the tilt angle. The relatively small effective Lande g-factor (g ~ 0.043) of the structure leads to skyrmionic excitations composed of the largest number of spins yet reported (s ~ 50). Although consistent with the skyrmion size observed, Hartree-Fock calculations, even after corrections, significantly overestimate the energy gaps over the entire range of our data.
We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic s-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon auto-correlation function g^{(2)}(tau) of the light emission confirms the onset of lasing in the first mode with g^{(2)}(0) approaching unity above threshold. In contrast, strong photon bunching associated with super-thermal values of g^{(2)}(0) is detected for the other mode for currents above threshold. This behavior is attributed to gain competition of the two modes induced by the common gain material, which is confirmed by photon crosscorrelation measurements revealing a clear anti-correlation between emission events of the two modes. The experimental studies are in excellent qualitative agreement with theoretical studies based on a microscopic semiconductor theory, which we extend to the case of two modes interacting with the common gain medium. Moreover, we treat the problem by an extended birth-death model for two interacting modes, which reveals, that the photon probability distribution of each mode has a double peak structure, indicating switching behavior of the modes for the pump rates around threshold.
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