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Register a new userLarge Skyrmions in an Al(0.13)Ga(0.87)As Quantum Well
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S. P. Shukla
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We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling u =1 as a function of the tilt angle. The relatively small effective Lande g-factor (g ~ 0.043) of the structure leads to skyrmionic excitations composed of the largest number of spins yet reported (s ~ 50). Although consistent with the skyrmion size observed, Hartree-Fock calculations, even after corrections, significantly overestimate the energy gaps over the entire range of our data.
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A nuclear magnetic resonance (NMR) study is reported of multiple (30) Al$_{0.13}$Ga$_{0.87}$As quantum well (QW) sample near the Landau level filling factor $ u =1$. In these Al$_{0.13}$Ga$_{0.87}$As QWs the effective $g$ factor is nearly zero. This can lead to two effects: vanishing electronic polarization $(P)$ and skyrmionic excitations composed of a huge number of spins. As small $P$ values cause an overlap of the NMR signals from the QW and barriers, a special technique was employed to allow these two signals to be distinguished. The QW signal corresponds to a small, negative, and very broad distribution of spin polarization that exhibits thermally induced depolarization. Such a distribution can be attributed to sample inhomogeneities and/or to large skyrmions, the latter possibility being favored by observation of a very fast $T_{2}^{-1}$ rate.
We report on transport signatures of hidden quantum Hall stripe (hQHS) phases in high ($N > 2$) half-filled Landau levels of Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum wells with varying Al mole fraction $x < 10^{-3}$. Residing between the conventional stripe phases (lower $N$) and the isotropic liquid phases (higher $N$), where resistivity decreases as $1/N$, these hQHS phases exhibit isotropic and $N$-independent resistivity. Using the experimental phase diagram we establish that the stripe phases are more robust than theoretically predicted, calling for improved theoretical treatment. We also show that, unlike conventional stripe phases, the hQHS phases do not occur in ultrahigh mobility GaAs quantum wells, but are likely to be found in other systems.
We report on transport signatures of eight distinct bubble phases in the $N=3$ Landau level of a Al$_{x}$Ga$_{1-x}$As/Al$_{0.24}$Ga$_{0.76}$As quantum well with $x = 0.0015$. These phases occur near partial filling factors $ u^star approx 0.2,(0.8)$ and $ u^star approx 0.3,(0.7)$ and have $M = 2$ and $M = 3$ electrons (holes) per bubble, respectively. We speculate that a small amount of alloy disorder in our sample helps to distinguish these broken symmetry states in low-temperature transport measurements.
The electron-electron interaction quantum correction to the conductivity of the gated double well Al$_x$Ga$_{1-x}$As/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior; it is practically the same for both regimes.
We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $mathbf{kcdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
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