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Register a new userGiant anomalous Hall effect from spin-chirality scattering in a chiral magnet
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The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle respectively reach 40,000 {Omega}-1cm-1 and 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally-excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.
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Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-plane substrates by magnetron sputtering and studied the spin Hall effect (SHE) by combining experiments and first-principles calculations. The SHE of CoSi using CoSi/CoFeB/MgO heterostructures was investigated via spin Hall magnetoresistance and harmonic Hall measurements. First-principles calculations yield an intrinsic spin Hall conductivity (SHC) at the Fermi level that is consistent with the experiments and reveal its unique Fermi-energy dependence. Unlike the Dirac and Weyl fermion-mediated Hall conductivities that exhibit a peak-like structure centering around the topological node, SHC of B20-CoSi is odd and crosses zero at the node with two antisymmetric local extrema of opposite sign situated below and above in energy. Hybridization between Co d-Si p orbitals and spin-orbit coupling are essential for the SHC, despite the small (~1%) weight of Si p-orbital near the Fermi level. This work expands the horizon of topological spintronics and highlights the importance of Fermi-level tuning in order to fully exploit the topology of spin-1 chiral fermions for spin current generation.
Magnetic Weyl semimetals with broken time-reversal symmetry are expected to generate strong intrinsic anomalous Hall effects, due to their large Berry curvature. Here, we report a magnetic Weyl semimetal candidate Co3Sn2S2 with a quasi-two-dimensional crystal structure consisting of stacked Kagome lattices. This lattice provides an excellent platform for hosting exotic quantum topological states. We observe a negative magnetoresistance that is consistent with the chiral anomaly expected from the presence of Weyl fermions close to the Fermi level. The anomalous Hall conductivity is robust against both increased temperature and charge conductivity, which corroborates the intrinsic Berry-curvature mechanism in momentum space. Owing to the low carrier density in this material and the significantly enhanced Berry curvature from its band structure, the anomalous Hall conductivity and the anomalous Hall angle simultaneously reach 1130 S cm-1 and 20%, respectively, an order of magnitude larger than typical magnetic systems. Combining the Kagome-lattice structure and the long-range out-of-plane ferromagnetic order of Co3Sn2S2, we expect that this material is an excellent candidate for observation of the quantum anomalous Hall state in the two-dimensional limit.
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and electron orders. Nonlinear AHE includes the topological Hall effect (THE) that has been widely used to identify the presence of spin chirality in real space. But it can in principle be induced by band structure evolution via Berry curvatures in the reciprocal space. This effect has been largely overlooked due to the intertwined mechanisms in both real and reciprocal spaces. Here, we observed a giant nonlinear AHE with the resistivity up to 383.5 uohm cm, contributing unprecedentedly 97% of the total Hall response in EuCd2As2. Moreover, it can be further enhanced by tilting the magnetic field 30{deg} away from [001] direction, reaching a large anomalous Hall angle up to 21%. Although it shows exactly the same double-peak feature as THE, our scaling analysis and first-principles calculations reveal that the Berry phase is extremely sensitive to the spin canting, and nonlinear AHE is a consequence of band structure evolution under the external magnetic fields. When the spins gradually tilt from the in-plane antiferromagnetic ground state to out-of-plane direction, band crossing and band inversion occur, introducing a bandgap at {Gamma} point at a canting angle of 45{deg}. That contributes to the enhancement of Berry curvature and consequently a large intrinsic Hall conductivity. Our results unequivocally reveal the sensitive dependence of band structures on spin tilting process under external magnetic fields and its pronounced influence on the transport properties, which also need to be taken into consideration in other magnetic materials.
One of the most exciting properties of two dimensional materials is their sensitivity to external tuning of the electronic properties, for example via electric field or strain. Recently discovered analogues of phosphorene, group-IV monochalcogenides (MX with M = Ge, Sn and X = S, Se, Te), display several interesting phenomena intimately related to the in-plane strain, such as giant piezoelectricity and multiferroicity, which combine ferroelastic and ferroelectric properties. Here, using calculations from first principles, we reveal for the first time giant intrinsic spin Hall conductivities (SHC) in these materials. In particular, we show that the SHC resonances can be easily tuned by combination of strain and doping and, in some cases, strain can be used to induce semiconductor to metal transitions that make a giant spin Hall effect possible even in absence of doping. Our results indicate a new route for the design of highly tunable spintronics devices based on two-dimensional materials.
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