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Register a new userSpin Hall effect in a spin-1 chiral semimetal
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Spin-1 chiral semimetal is a new state of quantum matter hosting unconventional chiral fermions that extend beyond the common Dirac and Weyl fermions. B20-type CoSi is a prototypal material that accommodates such an exotic quasiparticle. To date, the spin transport properties in the spin-1 chiral semimetals, have not been explored yet. In this work, we fabricated B20-CoSi thin films on sapphire c-plane substrates by magnetron sputtering and studied the spin Hall effect (SHE) by combining experiments and first-principles calculations. The SHE of CoSi using CoSi/CoFeB/MgO heterostructures was investigated via spin Hall magnetoresistance and harmonic Hall measurements. First-principles calculations yield an intrinsic spin Hall conductivity (SHC) at the Fermi level that is consistent with the experiments and reveal its unique Fermi-energy dependence. Unlike the Dirac and Weyl fermion-mediated Hall conductivities that exhibit a peak-like structure centering around the topological node, SHC of B20-CoSi is odd and crosses zero at the node with two antisymmetric local extrema of opposite sign situated below and above in energy. Hybridization between Co d-Si p orbitals and spin-orbit coupling are essential for the SHC, despite the small (~1%) weight of Si p-orbital near the Fermi level. This work expands the horizon of topological spintronics and highlights the importance of Fermi-level tuning in order to fully exploit the topology of spin-1 chiral fermions for spin current generation.
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Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle respectively reach 40,000 {Omega}-1cm-1 and 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally-excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.
Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub-field of spintronics. We focus on the results that have converged to give us a clear understanding of the phenomena and how they have evolved from a qualitative to a more quantitative measurement of spin-currents and their associated spin-accumulation. Within the experimental framework, we review optical, transport, and magnetization-dynamics based measurements and link them to both phenomenological and microscopic theories of the effect. Within the theoretical framework, we review the basic mechanisms in both the extrinsic and intrinsic regime which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. We also review the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin-generation which has proven important in the measurements of the spin Hall angle. We further connect the spin-current generating spin Hall effect to the inverse spin galvanic effect, which often accompanies the SHE, in which an electrical current induces a non-equilibrium spin polarization. These effects share common microscopic origins and can exhibit similar symmetries when present in ferromagnetic/non-magnetic structures through their induced current-driven spin torques. Although we give a short chronological overview, the main body is structured from a pedagogical point of view, focusing on well-established and accepted physics.
We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $approx$0.001.
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferromagnets are usually considered because they exhibit high spin-orbit coupling (SOC). In addition to the above materials, 5d transition metal oxide e.g. Iridium Oxide (IrO 2 ) is a potential candidate which exhibits high SOC strength. Here we report a study of spin pumping and inverse spin Hall effect (ISHE), via ferromagnetic resonance (FMR), in IrO 2 /CoFeB system. We identify the individual contribution of spin pumping and other spin rectification effects in the magnetic layer, by investigating the in-plane angular dependence of ISHE signal. Our analysis shows significant contribution of spin pumping effect to the ISHE signal. We show that polycrystalline IrO 2 thin film exhibits high spin Hall conductivity and spin Hall angle which are comparable to the values of Pt.
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