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Register a new userHigh detection efficiency silicon single-photon detector with a monolithic integrated circuit of active quenching and active reset
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Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly required for many applications. Here, we present a practical approach to increase PDE of silicon SPD with a monolithic integrated circuit of active quenching and active reset (AQAR). The AQAR integrated circuit is specifically designed for thick silicon single-photon avalanche diode (SPAD) with high breakdown voltage (250-450 V), and then fabricated via the process of high-voltage 0.35-$mu$m bipolarCMOS-DMOS. The AQAR integrated circuit implements the maximum transition voltage of ~ 68 V with 30 ns quenching time and 10 ns reset time, which can easily boost PDE to the upper limit by regulating the excess bias up to a high enough level. By using the AQAR integrated circuit, we design and characterize two SPDs with the SPADs disassembled from commercial products of single-photon counting modules (SPCMs). Compared with the original SPCMs, the PDE values are increased from 68.3% to 73.7% and 69.5% to 75.1% at 785 nm, respectively, with moderate increases of dark count rate and afterpulse probability. Our approach can effectively improve the performance of the practical applications requiring silicon SPDs.
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Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, $I_mathrm{B}times Z_mathrm{load}$, where $Z_mathrm{load}$ is limited to 50 $Omega$ in standard r.f. electronics. Here, we break this limit by interfacing the 50 $Omega$ load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. It increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, we experimentally observed a 3.6$times$ higher pulse amplitude, 3.7$times$ faster slew rate, and 25.1 ps smaller timing jitter. The results match our numerical simulation, which incorporates both the hotspot dynamics in the SNSPD and the distributed nature in the transmission line taper. The taper studied here may become a useful tool to interface high-impedance superconducting nanowire devices to conventional low-impedance circuits.
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. Moreover, they are useful in applications such as LIDAR and low-light imaging. In this paper, we report the design and simulation of silicon waveguide-based SPADs on a silicon-on-insulator platform for visible wavelengths, focusing on two device families with different doping configurations: p-n+ and p-i-n+. We calculate the photon detection efficiency (PDE) and timing jitter at an input wavelength of 640 nm by simulating the avalanche process using a 2D Monte Carlo method, as well as the dark count rate (DCR) at 243 K and 300 K. For our simulated parameters, the optimal p-i-n+ SPADs show the best device performance, with a saturated PDE of 52.4 +/- 0.6% at a reverse bias voltage of 31.5 V, full-width-half-max (FWHM) timing jitter of 10 ps, and a DCR of < 5 counts per second at 243 K.
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ~100 nm. Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirement in fabrication accuracy, providing potential applications in the development of ultra-large active area detectors. However, the study on SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an opening question. This study demonstrates a NbN SMSPD with a saturated system detection efficiency (SDE) of ~92.2% at a dark count rate of ~200 cps, a polarization sensitivity of ~1.03, and a minimum timing jitter of ~48 ps, at the telecom wavelength of 1550 nm when coupled with a single mode fiber and operated at 0.84 K. Furthermore, the detectors SDE is over 70% when operated at a 2.1-K closed-cycle cryocooler.
We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array, as well as characterization measurements are discussed.
In the past decade superconducting nanowire single photon detectors (SNSPDs) have gradually become an indispensable part of any demanding quantum optics experiment. Until now, most SNSPDs are coupled to single-mode fibers. SNSPDs coupled to multimode fibers have shown promising efficiencies but are yet to achieve high time resolution. For a number of applications ranging from quantum nano-photonics to bio-optics, high efficiency and high time-resolution are desired at the same time. In this paper, we demonstrate the role of polarization on the efficiency of multi-mode fiber coupled detectors, and show how it can be addressed. We fabricated high performance 20, 25 and 50{mu}m diameter detectors targeted for visible, near infrared, and telecom wavelengths. A custom-built setup was used to simulate realistic experiments with randomized modes in the fiber. We simultaneously achieved system efficiency >80% and time resolution <20 ps and made large detectors that offer outstanding performances.
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