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Register a new userSynthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications
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The microstructures and interfaces of two-phase vertically aligned nanocomposite (VAN) thin films play a key role in the design of spintronic device architectures and their multifunctional properties. Here, we show how the microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3:NiO (LSMO:NiO) can be effectively tuned from nano-granular to nano-columnar, and to nano-maze by controlling the number of laser shots from the two constituent phase targets in the pulsed laser deposition (PLD) film growth. The observed microstructural induced strain is found to significantly enhance the magnetoresistance in a very broad temperature range between 10-240 K and to modulate the in-plane exchange bias (EB), with the largest EB value observed in the maximally strained heterostructures. Most interestingly, a unique perpendicular exchange bias (PEB) effect is also observed for these heterostructures with an enhanced PEB field of up to 230 Oe. X-ray magnetic circular dichroism and training effect measurements demonstrate that the observed EB is disorder-induced and arises due to the pinning of NiO uncompensated moments at the disordered interface which is ferromagnetically coupled with LSMO. Furthermore, systematic changes in the electronic structure across the vertical interface related to a variation of the Mn3+/Mn4+ content arise as a consequence of out-of-plane tensile strain.
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Magneto optic measurements are a very powerful tool for investigating the polarization of a conduction band as a function of temperature and are used here to study the polarization of the mobile electrons in 50nm LSMO (x=0.3) strained thin films grown epitaxially on single crystalline (001) LaAlO3 (LAO) and (001) lattice matched substrate (LSAT). The magnetic circular dichroism (MCD) has been investigated in magnetic fields up to 0.5 T and over a temperature range (10 to 450 K). The MCD spectra of both the films show a peak at the band gap at around 3 eV and the peak is found to be shifted towards lower energy side with the increase of temperature. A separate polaron peak (well known in insulating samples) appears at lower energy (about 1.8 eV) with the increase of temperature in all these metallic films. The rapid decrease in conduction band polarization in the film on LAO has strong implications for the use of these manganites in room temperature spintronics.
We have detected strong dichroism in the Ni $L_{2,3}$ x-ray absorption spectra of monolayer NiO films. The dichroic signal appears to be very similar to the magnetic linear dichroism observed for thicker antiferromagnetic NiO films. A detailed experimental and theoretical analysis reveals, however, that the dichroism is caused by crystal field effects in the monolayer films, which is a non trivial effect because the high spin Ni $3d^{8}$ ground state is not split by low symmetry crystal fields. We present a practical experimental method for identifying the independent magnetic and crystal field contributions to the linear dichroic signal in spectra of NiO films with arbitrary thicknesses and lattice strains. Our findings are also directly relevant for high spin $3d^{5}$ and $3d^{3}$ systems such as LaFeO$_{3}$, Fe$_{2}$O$_{3}$, VO, LaCrO$_{3}$, Cr$_{2}$O$_{3}$, and Mn$^{4+}$ manganate thin films.
Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transition from a ferromagnetic-metallic to a paramagnetic-insulating state around room temperature, so that the observed spectroscopic features can be interpreted within a phase separation scenario. A quantitative analysis of the observed spectroscopic features is reported pointing out the occurrence of phase modulation and its possible correlation with the properties of the system.
LaVO$_3$ (LVO) has been proposed as a promising material for photovoltaics because its strongly correlated textit{d} electrons can facilitate the creation of multiple electron-hole pairs per incoming photon, which would lead to increased device efficiency. In this study, we intentionally grow off-stoichiometric LVO films by changing the growth conditions such as laser fluence. Our aim is to study how deviating La:V stoichiometries affect the electronic properties of LVO thin films. We find that the off-stoichiometry clearly alters the physical properties of the films. Structural characterization shows that both La-rich and V-rich films have different levels of structural distortion, with La-rich (V-rich) films showing a larger (smaller) out-of-plane lattice parameter compared to what one would expect from epitaxial strain effects alone. Both types of films show deviation from the behavior of bulk LVO in optical measurement, i.e., they do not show signatures of the expected long range orbital order, which can be a result of the structural distortions or the presence of structural domains. In transport measurements, La-rich films display clear signatures of electronic phase separation accompanying a temperature induced metal-insulator transition, while V-rich films behave as Mott insulators. The out-of-plane lattice parameter plays a crucial role in determining the transport properties, as the crossover from Mott-insulating to disorder-induced phase-separated behavior occurs around a lattice parameter value of 3.96 $overset{circ}{mathrm{A}}$, quite different from what has been previously reported.
The Channel-Spark method was used for deposition of highly oriented ferromagnetic La0.7Sr0.3MnO3 films on NdGaO3 substrates. It was found that additional oxygen decreases the film quality suppressing the Curie temperature and metal-insulator transition below the room temperature. To achieve the best quality of the films the samples were either annealed in high vacuum at deposition temperature or even deposited in argon atmosphere with no oxygen annealing. For such films the resistive measurements showed a metallic behaviour in the interval 10-300 K in accordance with the high Curie point (Tc 350 K). Micro-Raman analysis indicate that the La0.7Sr0.3MnO3 films are well ordered, while some outgrowths show stoichiometrical deviations.
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