No Arabic abstract
This study investigates the transport properties of a chiral elemental semiconductor tellurium (Te) under magnetic fields and pressure. Application of hydrostatic pressure reduces the resistivity of Te, while its temperature dependence remains semiconducting up to 4 GPa, contrary to recent theoretical and experimental studies. Application of higher pressure causes structural as well as semiconductor--metal transitions. The resulting metallic phase above 4 GPa exhibits superconductivity at 2 K along with a noticeable linear magnetoresistance effect. On the other hand, at ambient pressure, we identified metallic surface states on the as-cleaved (10$bar{1}$0) surfaces of Te. The nature of these metallic surface states has been systematically studied by analyzing quantum oscillations observed in high magnetic fields. We clarify that a well-defined metallic surface state exists not only on chemically etched samples that were previously reported, but also on as-cleaved ones.
The magneto-transport properties of phosphorene are investigated by employing the generalized tight-binding model to calculate the energy bands. For bilayer phosphorene, a composite magnetic and electric field is shown to induce a feature-rich Landau level (LL) spectrum which includes two subgroups of low-lying LLs. The two subgroups possess distinct features in level spacings, quantum numbers, as well as field dependencies. These together lead to anomalous quantum Hall (QH) conductivities which include a well-shape, staircase and composite quantum structures with steps having varying heights and widths. The Fermi energy-magnetic field-Hall conductivity ($E_{F}-B_{z}-sigma_{xy}$) and Fermi energy-electric field-Hall conductivity ($E_{F}-E_{z}-sigma_{xy}$) phase diagrams clearly exhibit oscillatory behaviors and cross-over from integer to half-integer QH effect. The predicted results should be verifiable by magneto-transport measurements in a dual-gated system.
Topological semimetals are characterized by protected crossings between conduction and valence bands. These materials have recently attracted significant interest because of the deep connections to high-energy physics, the novel topological surface states, and the unusual transport phenomena. While Dirac and Weyl semimetals have been extensively studied, the nodal-line semimetal remains largely unexplored due to the lack of an ideal material platform. In this paper, we report the magneto-transport properties of two nodal-line semimetal candidates CaAgAs and CaCdGe. First, our single crystalline CaAgAs supports the first hydrogen atom nodal-line semimetal, where only the topological nodal-line is present at the Fermi level. Second, our CaCdGe sample provides an ideal platform to perform comparative studies because it features the same topological nodal line but has a more complicated Fermiology with irrelevant Fermi pockets. As a result, the magnetoresistance of our CaCdGe sample is more than 100 times larger than that of CaAgAs. Through our systematic magneto-transport and first-principles band structure calculations, we show that our CaTX compounds can be used to study, isolate, and control the novel topological nodal-line physics in real materials.
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm.
We show that a system of particles interacting through the exp-6 pair potential, commonly used to describe effective interatomic forces under high compression, exhibits anomalous melting features such as reentrant melting and a rich solid polymorphism, including a stable BC8 crystal. We relate this behavior to the crossover, with increasing pressure, between two different regimes of local order that are associated with the two repulsive length scales of the potential. Our results provide a unifying picture for the high-pressure melting anomalies observed in many elements and point out that, under extreme conditions, atomic systems may reveal surprising similarities with soft matter.
A detailed investigation on the structural and magneto-transport properties of iron intercalated Bi2Se3 single crystals have been presented. The x-ray diffraction and Raman studies confirm the intercalation of Fe in the van der Waals gaps between the layers. The electrical resistivity of the compounds decreases upon intercalation, and Hall resistivity shows the enhancement of the charge carriers upon intercalation. The magnetoresistance shows the non-saturating linear behavior at higher magnetic field and low temperature. Intercalation of Fe increases the onset of the linear magnetoresistance behavior, indicating the reduction in quantum effects. The Kohler scaling employed on the magnetoresistance data indicates single scattering process for all these compounds in the measured temperature range of 3- 300 K.