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Register a new userStructural and magneto-transport studies of iron intercalated Bi2Se3 single crystals
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A detailed investigation on the structural and magneto-transport properties of iron intercalated Bi2Se3 single crystals have been presented. The x-ray diffraction and Raman studies confirm the intercalation of Fe in the van der Waals gaps between the layers. The electrical resistivity of the compounds decreases upon intercalation, and Hall resistivity shows the enhancement of the charge carriers upon intercalation. The magnetoresistance shows the non-saturating linear behavior at higher magnetic field and low temperature. Intercalation of Fe increases the onset of the linear magnetoresistance behavior, indicating the reduction in quantum effects. The Kohler scaling employed on the magnetoresistance data indicates single scattering process for all these compounds in the measured temperature range of 3- 300 K.
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In this letter, we report growth and characterization of bulk Bi2Se3 single crystals. The studied Bi2Se3 crystals are grown by self flux method through solid state reaction from high temperature (950C) melt of constituent elements and slow cooling (2C/hour). The resultant crystals are shiny and grown in [00l] direction, as evidenced from surface XRD. Detailed Reitveld analysis of PXRD (powder x-ray diffraction) of the crystals showed that these are crystallized in rhombohedral crystal structure with space group of R3m (D5) and the lattice parameters are a = 4.14(2)A, b = 4.14 (2) A and c = 28.7010(7) A. Temperature versus resistivity (R-T) plots revealed metallic conduction down to 2K, with typical room temperature resistivity (R300K) of around 0.53 mohm-cm and residual resistivity of 0.12 mohm-cm. Resistivity under magnetic field ] measurements exhibited large +Ve magneto resistance right from 2K to 200K. Isothermal magneto resistance [RH] measurements at 2K, 100K and 200K exhibited magneto resistance (MR) of up to 240, 130 and 60 percent respectively at 14 Tesla. Further the MR plots are non saturating and linear with field at all temperature. At 2K the MR plots showed clear quantum oscillations at above say 10 Tesla applied field. Also the Kohler plots i.e., were seen consolidating on one plot. Interestingly, the studied Bi2Se3 single crystal exhibited the Shubnikov-de Haas oscillations (SdH) at 2K under different applied magnetic fields ranging from 4Tesla to 14 Tesla
We have synthesized single crystals of CeZnAl$_3$, which is a new member of the family of the Ce-based intermetallics Ce$TX_3$ ($T$ = transition metal, $X$= Si, Ge, Al), crystallizing in the non-centrosymmetric tetragonal BaNiSn$_3$-type structure. Magnetization, specific heat and resistivity measurements all show that CeZnAl$_3$ orders magnetically below around 4.4 K. Furthermore, magnetization measurements exhibit a hysteresis loop at low temperatures and fields, indicating the presence of a ferromagnetic component in the magnetic state. This points to a different nature of the magnetism in CeZnAl$_3$ compared to the other isostructural Ce$T$Al$_3$ compounds. Resistivity measurements under pressures up to 1.8 GPa show a moderate suppression of the ordering temperature with pressure, suggesting that measurements to higher pressures are required to look for quantum critical behavior.
The trigonal compound EuMg2Bi2 has recently been discussed in terms of its topological band properties. These are intertwined with its magnetic properties. Here detailed studies of the magnetic, thermal, and electronic transport properties of EuMg2Bi2 single crystals are presented. The Eu{+2} spins-7/2 in EuMg2Bi2 exhibit an antiferromagnetic (AFM) transition at a temperature TN = 6.7 K, as previously reported. By analyzing the anisotropic magnetic susceptibility chi data below TN in terms of molecular-field theory (MFT), the AFM structure is inferred to be a c-axis helix, where the ordered moments in the hexagonal ab-plane layers are aligned ferromagnetically in the ab plane with a turn angle between the moments in adjacent moment planes along the c axis of about 120 deg. The magnetic heat capacity exhibits a lambda anomaly at TN with evidence of dynamic short-range magnetic fluctuations both above and below TN. The high-T limit of the magnetic entropy is close to the theoretical value for spins-7/2. The in-plane electrical resistivity rho(T) data indicate metallic character with a mild and disorder-sensitive upturn below Tmin = 23 K. An anomalous rapid drop in rho(T) on cooling below TN as found in zero field is replaced by a two-step decrease in magnetic fields. The rho(T) measurements also reveal an additional transition below TN in applied fields of unknown origin that is not observed in the other measurements and may be associated with an incommensurate to commensurate AFM transition. The dependence of TN on the c-axis magnetic field Hperp was derived from the field-dependent chi(T), Cp(T), and rho(T) measurements. This TN(Hperp) was found to be consistent with the prediction of MFT for a c-axis helix with S = 7/2 and was used to generate a phase diagram in the Hperp-T plane.
We report structural and magnetic properties studies of large high quality single-crystals of the frustrated magnet, Nd$_2$Zr$_2$O$_7$. Powder x-ray diffraction analysis confirms that Nd$_2$Zr$_2$O$_7$ adopts the pyrochlore structure. Room-temperature x-ray diffraction and time-of-flight neutron scattering experiments show that the crystals are stoichiometric in composition with no measurable site disorder. The temperature dependence of the magnetic susceptibility shows no magnetic ordering at temperatures down to 0.5 K. Fits to the magnetic susceptibility data using a Curie-Weiss law reveal a ferromagnetic coupling between the Nd moments. Magnetization versus field measurements show a local Ising anisotropy along the <111> axes of the Nd$^{3+}$ ions in the ground state. Specific heat versus temperature measurements in zero applied magnetic field indicate the presence of a thermal anomaly below $Tsim7$ K, but no evidence of magnetic ordering is observed down to 0.5 K. The experimental temperature dependence of the single-crystal bulk dc susceptibility and isothermal magnetization are analyzed using crystal field theory and the crystal field parameters and exchange coupling constants determined.
We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolute value of S increases monotonically to 243 uV/K with increasing temperature up to 550 K. The large S may originate from the low carrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of 62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggests a crossover of dominant scattering mechanism from ionized impurity to acoustic phonon scattering with increasing temperature. The existence of local vibration modes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysis of experimental data of structural refinement and specific heat, which give an Einstein temperature of 50 K and a Debye temperature of 200 K. This local vibration of Ba atoms should be responsible for the low thermal conductivity (1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds for thermoelectric application is discussed.
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