No Arabic abstract
Trapped-ion quantum computers have demonstrated high-performance gate operations in registers of about ten qubits. However, scaling up and parallelizing quantum computations with long one-dimensional (1D) ion strings is an outstanding challenge due to the global nature of the motional modes of the ions which mediate qubit-qubit couplings. Here, we devise methods to implement scalable and parallel entangling gates by using engineered localized phonon modes. We propose to tailor such localized modes by tuning the local potential of individual ions with programmable optical tweezers. Localized modes of small subsets of qubits form the basis to perform entangling gates on these subsets in parallel. We demonstrate the inherent scalability of this approach by presenting analytical and numerical results for long 1D ion chains and even for infinite chains of uniformly spaced ions. Furthermore, we show that combining our methods with optimal coherent control techniques allows to realize maximally dense universal parallelized quantum circuits.
We report on progress towards implementing mixed ion species quantum information processing for a scalable ion trap architecture. Mixed species chains may help solve several problems with scaling ion trap quantum computation to large numbers of qubits. Initial temperature measurements of linear Coulomb crystals containing barium and ytterbium ions indicate that the mass difference does not significantly impede cooling at low ion numbers. Average motional occupation numbers are estimated to be $bar{n} approx 130$ quanta per mode for chains with small numbers of ions, which is within a factor of three of the Doppler limit for barium ions in our trap. We also discuss generation of ion-photon entanglement with barium ions with a fidelity of $F ge 0.84$, which is an initial step towards remote ion-ion coupling in a more scalable quantum information architecture. Further, we are working to implement these techniques in surface traps in order to exercise greater control over ion chain ordering and positioning.
Due to inhomogeneous broadening, the absorption lines of rare-earth-ion dopands in crystals are many order of magnitudes wider than the homogeneous linewidths. Several ways have been proposed to use ions with different inhomogeneous shifts as qubit registers, and to perform gate operations between such registers by means of the static dipole coupling between the ions. In this paper we show that in order to implement high-fidelity quantum gate operations by means of the static dipole interaction, we require the participating ions to be strongly coupled, and that the density of such strongly coupled registers in general scales poorly with register size. Although this is critical to previous proposals which rely on a high density of functional registers, we describe architectures and preparation strategies that will allow scalable quantum computers based on rare-earth-ion doped crystals.
Efficient ion-photon coupling is an important component for large-scale ion-trap quantum computing. We propose that arrays of phase Fresnel lenses (PFLs) are a favorable optical coupling technology to match with multi-zone ion traps. Both are scalable technologies based on conventional micro-fabrication techniques. The large numerical apertures (NAs) possible with PFLs can reduce the readout time for ion qubits. PFLs also provide good coherent ion-photon coupling by matching a large fraction of an ions emission pattern to a single optical propagation mode (TEM00). To this end we have optically characterized a large numerical aperture phase Fresnel lens (NA=0.64) designed for use at 369.5 nm, the principal fluorescence detection transition for Yb+ ions. A diffraction-limited spot w0=350+/-15 nm (1/e^2 waist) with mode quality M^2= 1.08+/-0.05 was measured with this PFL. From this we estimate the minimum expected free space coherent ion-photon coupling to be 0.64%, which is twice the best previous experimental measurement using a conventional multi-element lens. We also evaluate two techniques for improving the entanglement fidelity between the ion state and photon polarization with large numerical aperture lenses.
For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z-gates which, combined with two $X_{pi/2}$ gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z-gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z-gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z-gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse shaping techniques such as DRAG. We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z-gates to correct rotation errors (DRAGZ) realizes a 13.3~ns $X_{pi/2}$ gate characterized by low error ($1.95[3]times 10^{-4}$) and low leakage ($3.1[6]times 10^{-6}$). Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders-of-magnitude smaller than pulse errors due to decoherence.
We propose a novel scheme of solid state realization of a quantum computer based on single spin enhancement mode quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot, in contrast to depletion mode dots based on expelling of electrons from multi-electron dots by gates. The quantum computer architectures based on depletion dots are confronted by several challenges making scalability difficult. These challenges can be successfully met by the approach based on ehnancement mode, capable of producing square array of dots with versatile functionalities. These functionalities allow transportation of qubits, including teleportation, and error correction based on straightforward one- and two-qubit operations. We describe physical properties and demonstrate experimental characteristics of enhancement quantum dots and single-electron transistors based on InAs/GaSb composite quantum wells. We discuss the materials aspects of quantum dot quantum computing, including the materials with large spin splitting such as InAs, as well as perspectives of enhancement mode approach in materials such as Si.