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Register a new userAttractive and repulsive exciton-polariton interactions mediated by an electron gas
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Added by
Miguel Bastarrachea-Magnani
Publication date
2020
fields
Physics
and research's language is
English
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Realising strong photon-photon interactions in a solid-state setting is a major goal with far reaching potential for optoelectronic applications. Using Landaus quasiparticle framework combined with a microscopic many-body theory, we explore the interactions between exciton-polaritons and trions in a two-dimensional semiconductor injected with an electron gas inside a microcavity. We show that particle-hole excitations in the electron gas mediate an attractive interaction between the polaritons, whereas a trion-polariton interaction mediated by the exchange of an electron is either repulsive or attractive depending on the specific polariton branch. These mediated interactions are intrinsic to the quasiparticles and are also present in the absence of light. Importantly, they can be tuned to be more than an order of magnitude stronger than the direct polariton-polariton interaction in the absence of the electron gas, thereby providing a promising outlook for non-linear optical components. Finally, we compare our theoretical predictions with two recent experiments.
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The quest to realise strongly interacting photons remains an outstanding challenge both for fundamental science and for applications. Here, we explore mediated photon-photon interactions in a highly imbalanced two-component mixture of exciton-polaritons in a semiconductor microcavity. Using a theory that takes into account non-perturbative correlations between the excitons as well as strong light-matter coupling, we demonstrate the high tunability of an effective interaction between quasiparticles formed by minority component polaritons interacting with a Bose-Einstein condensate (BEC) of a majority component polaritons. In particular, the interaction, which is mediated by the exchange of sound modes in the BEC can be made strong enough to support a bound state of two quasiparticles. Since these quasiparticles consist partly of photons, this in turn corresponds to a dimer state of photons propagating through the BEC. This gives rise to a new light transmission line where the bound state wave function is directly mapped onto correlations between outgoing photons. Our findings open up new routes for realising highly non-linear optical materials and novel hybrid light-matter quantum systems.
We observe for the first time two-photon excited condensation of exciton-polaritons. The angle-resolved photoluminescence (PL) from the Lower Polariton (LP) ground state in our planar GaAs-based microcavity structure exhibits a clear intensity threshold as a function of increased two-photon excitation power, coinciding with an interaction-induced blueshift and a narrowing of spectral linewidth, characteristic of the transition from a thermal distribution of lower polaritons to polariton condensation. Two-Photon Absorption (TPA) is evidenced in the quadratic dependence of the input-output curves below and above the threshold region. Second Harmonic Generation (SHG) is ruled out by both this threshold behavior and by scanning the pump photon energy and observing a lack of dependence of the LP emission peak energy. Our results pave the way towards realization of a polariton-based stimulated THz radiation source, stemming from the dipole-allowed transition from the Quantum Well (QW) 2p dark exciton state to the 1s-exciton-based LP ground state, as theoretically predicted in [A. V. Kavokin et al., Phys. Rev. Lett. 108, 197401 (2012)].
We examine the photoluminescence of highly-excited exciton-polariton condensates in semiconductor microcavities. Under strong pumping, exciton-polariton condensates have been observed to undergo a lasing transition where strong coupling between the excitons and photons is lost. We discuss an alternative high-density scenario, where the strong coupling is maintained. We find that the photoluminescence smoothly transitions between the lower polariton energy to the cavity photon energy. An intuitive understanding of the change in spectral characteristics is given, as well as differences to the photoluminescence characteristics of the lasing case.
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. The Coulomb drag resistivity is a direct measure of the strength of the interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter $r_s$ up to 14). Our ambipolar device design allows comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions, and also shows the effects of the different effective masses of electrons and holes in GaAs.
We investigate the interactions between exciton-polaritons in N two-dimensional semiconductor layers embedded in a planar microcavity. In the limit of low-energy scattering, where we can ignore the composite nature of the excitons, we obtain exact analytical expressions for the spin-triplet and spin-singlet interaction strengths, which go beyond the Born approximation employed in previous calculations. Crucially, we find that the strong light-matter coupling enhances the strength of polariton-polariton interactions compared to that of the exciton-exciton interactions, due to the Rabi coupling and the small photon-exciton mass ratio. We furthermore obtain the dependence of the polariton interactions on the number of layers N, and we highlight the important role played by the optically dark states that exist in multiple layers. In particular, we predict that the singlet interaction strength is stronger than the triplet one for a wide range of parameters in most of the currently used transition metal dichalcogenides. This has consequences for the pursuit of polariton condensation and other interaction-driven phenomena in these materials.
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