No Arabic abstract
We investigate the ultrafast spin dynamics in an epitaxial hcp(1100) cobalt thin film. By performing pump-probe magneto-optical measurements with the magnetization along either the easy or hard magnetic axis, we determine the demagnetization and recovery times for the two axes. We observe a 35% slower dynamics along the easy magnetization axis, which we attribute to magneto-crystalline anisotropy of the electron-phonon coupling, supported by our ab initio calculations. This points towards an unambiguous and previously undisclosed role of anisotropic electron-lattice coupling in ultrafast magnetism.
We investigate the spin dynamics driven by terahertz magnetic fields in epitaxial thin films of cobalt in its three crystalline phases. The terahertz magnetic field generates a torque on the magnetization which causes it to precess for about 1 ps, with a sub-picosecond temporal lag from the driving force. Then, the magnetization undergoes natural damped THz oscillations at a frequency characteristic of the crystalline phase. We describe the experimental observations solving the inertial Landau-Lifshitz-Gilbert equation. Using the results from the relativistic theory of magnetic inertia, we find that the angular momentum relaxation time $eta$ is the only material parameter needed to describe all the experimental evidence. Our experiments suggest a proportionality between $eta$ and the strength of the magneto-crystalline anisotropy.
WTe2 Weyl semimetal hosts the natural broken inversion symmetry and strong spin orbit coupling, making it promising for exotic spin/valley dynamics within a picosecond timescale. Here, we unveil an anisotropic ultrafast spin/valley dynamics in centimeter-scale, single-crystalline Td-WTe2 films using a femtosecond pump-probe technique at room temperature. We observe a transient (~0.8 ps) intra-valley transition and a subsequent polarization duration (~5 ps) during the whole spin/valley relaxation process. Furthermore, the relaxation exhibits the remarkable anisotropy of approximately six-fold and two-fold symmetries due to the intrinsic anisotropy along the crystalline orientation and the extrinsic matrix element effect, respectively. Our results offer a prospect for the ultrafast manipulation of spin/valleytronics in topological quantum materials for dissipationless high-speed spin/valleytronic devices.
A spin-torque ferromagnetic resonance study is performed in epitaxial $mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbit torques depend on the crystallographic direction of current and are correlated with the exchange bias direction set during growth. We suggest that the uncompensated moments at the Fe / IrMn interface are responsible for the observed anisotropy. Our findings highlight the importance of crystalline and magnetic structures for the spin-Hall effect in antiferromagnets.
Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter than 100fs. Here, we investigate the evolution of non-equilibrium charges towards an isotropic distribution by means of fluence-dependent ultrafast spectroscopy and develop an analytical model able to quantify the isotropization process. In contrast to conventional semiconductors, the isotropization is governed by optical phonon emission, rather than electron-electron scattering, which nevertheless contributes in shaping the anisotropic photocarrier occupation within the first few fs.
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements. Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grown in order to obtain a high quality system, capable of functioning at room temperature. Spin polarized transport measurements reveal significant TMR values of -18% at 2 K and -3% at 290 K. In addition, the TMR ratio follows a unique bias voltage dependence that has been theoretically predicted to be the signature of spin filtering in MTJs containing magnetic barriers. CoFe2O4 tunnel barriers therefore provide a model system to investigate spin filtering in a wide range of temperatures.