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Register a new userNegative spin-Hall angle and anisotropic spin-orbit torques in epitaxial IrMn
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A spin-torque ferromagnetic resonance study is performed in epitaxial $mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbit torques depend on the crystallographic direction of current and are correlated with the exchange bias direction set during growth. We suggest that the uncompensated moments at the Fe / IrMn interface are responsible for the observed anisotropy. Our findings highlight the importance of crystalline and magnetic structures for the spin-Hall effect in antiferromagnets.
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Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable damping-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.
High spin to charge conversion efficiency is the requirement for the spintronics devices which is governed by spin pumping and inverse spin Hall effect (ISHE). In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet/ heavy metal (HM) heterostructures. Recently antiferromagnetic (AFM) materials are found to be good replacement of HMs because AFMs exhibit terahertz spin dynamics, high spin-orbit coupling, and absence of stray field. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for $Co_{40}Fe_{40}B_{20} (12 nm)/ Cu (3 nm)/ Ir_{50}Mn_{50} (t nm)/ AlO_{x} (3 nm)$ samples where textit{t} value varies from 0 to 10 nm. Damping of all the samples are higher than the single layer CoFeB which indicates that spin pumping due to IrMn is the underneath mechanism. Further the spin pumping in the samples are confirmed by angle dependent ISHE measurements. We have also disentangled other spin rectifications effects and found that the spin pumping is dominant in all the samples. From the ISHE analysis the real part of spin mixing conductance (textit{$g_{r}^{uparrow downarrow}$}) is found to be 0.704 $pm$ 0.003 $times$ $10^{18}$ $m^{-2}$.
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.
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