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SliT: A Strip-sensor Readout Chip with Subnanosecond Time-walk for the J-PARC Muon $g-2$/EDM Experiment

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 Added by Yutaro Sato
 Publication date 2020
  fields Physics
and research's language is English




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A new silicon-strip readout chip named SliT has been developed for the measurement of the muon anomalous magnetic moment and electric dipole moment at J-PARC. The SliT is designed in the Silterra 180 nm CMOS technology with mixed-signal integrated circuits. An analog circuit incorporates a conventional charge-sensitive amplifier, shaping amplifiers, and two distinct discriminators for each of 128 identical channels. A digital part includes storage memories, an event building block, a serializer, and LVDS drivers. A distinct feature of the SliT is utilization of the zero-cross architecture, which consists of a CR-RC filter followed by a CR circuit as a voltage differentiator. This architecture enables to generate hit signals with subnanosecond amplitude-independent time walk, which is the primary requirement for the experiment. The test results show the time walk of $0.38 pm 0.16$ ns between 0.5 and 3 MIP signals. The equivalent noise charge is $1547 pm 75 $ $e^{-}$ (rms) at $C_{rm det} = 33$ pF as a strip-sensor capacitance. Other functionalities such as a strip-sensor readout chip have also been proven in the tests. The SliT128C satisfies all requirements of the J-PARC muon $g-2$/EDM experiment.



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We report on the development of a front-end ASIC for silicon-strip detectors of the J-PARC Muon g-2/EDM experiment. This experiment aims to measure the muon anomalous magnetic moment and electric dipole moment precisely to explore new physics beyond the Standard Model. Since the time and momentum of positrons from muon decay are key information in the experiment, a fast response with high granularity is demanded to silicon-strip detectors as the positron tracker. The readout ASIC is thus required to tolerate a high hit rate of 1.4 MHz per strip and to have deep memory for the period of 40 us with 5 ns time resolution. To satisfy the experimental requirements, an analog prototype ASIC was newly designed with the Silterra 180 nm CMOS technology. In the evaluation test, the time-walk was demonstrated to reach 0.8~ns with a sufficient dynamic range of 6~MIPs and pulse width of 45~ns for 1 MIP event. The design details and performance of the ASIC are discussed in this article.
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