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Register a new userIn Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
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The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.
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For quantitative electron microscopy high precision position information is necessary so that besides an adequate resolution and sufficiently strong contrast of atoms, small width of peaks which represent atoms in structural images is needed. Size of peak is determined by point spread (PS) of instruments as well as that of atoms when point resolution reach the subangstrom scale and thus PS of instruments is comparable with that of atoms. In this article, relationship between PS with atomic numbers, sample thickness, and spherical aberration coefficients will be studied in both negative Cs imaging (NCSI) and positive Cs imaging (PCSI) modes by means of dynamical image simulation. Through comparing the peak width with different thickness and different values of spherical aberration, NCSI mode is found to be superior to PCSI considering smaller peak width in the structural image.
We report on fabrication and characterization of electronic devices printed with inks of quasi-1D van der Waals materials. The quasi-1D van der Waals materials are characterized by 1D motifs in their crystal structure, which allows for their exfoliation into bundles of atomic chains. The ink was prepared by the liquid-phase exfoliation of crystals of TiS3 semiconductor into quasi-1D nanoribbons dispersed in a mixture of ethanol and ethylene glycol. The temperature dependent electrical measurements indicate that electron transport in the printed devices is dominated by the electron hopping mechanisms. The low-frequency electronic noise in the printed devices is of 1/f type near room temperature (f is the frequency). The abrupt changes in the temperature dependence of the noise spectral density and the spectrum itself can be indicative of the phase transition in individual TiS3 nanoribbons as well as modifications in the hopping transport regime. The obtained results attest to the potential of quasi-1D van der Waals materials for applications in printed electronics.
Advances in atomic resolution in situ environmental transmission electron microscopy for direct probing of gas-solid reactions, including at very high temperatures are described. In addition, recent developments of dynamic real time in situ studies at the Angstrom level using a hot stage in an aberration corrected environment are presented. In situ data from Pt and Pd nanoparticles on carbon with the corresponding FFT (optical diffractogram) illustrate an achieved resolution of 0.11 nm at 500 C and higher in a double aberration corrected TEM and STEM instrument employing a wider gap objective pole piece. The new results open up opportunities for dynamic studies of materials in an aberration corrected environment.
Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 pm 0.5) cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.
Defects are generally regarded to have negative impact on carrier recombination, charge-transport and ion migration in perovskite materials, which thus lower the efficiency and stability of perovskite optoelectronic devices. Meanwhile, lots of efforts which focused on minimizing defects have greatly promoted the application of perovskite materials. Then, can defects be positive in perovskite optoelectronic devices? Herein, relying on in-depth understanding of defect-associated effects in semiconductors, trapping of photo-generated carriers by defects is applied to enlarge photoconductive gain in perovskite photodetector. The record photoconductive gain, gain-bandwidth product and detection limit were achieved in the photodetector. Exceeding the general concept that defects are harmful, we identify a new view that the defects can be positive in perovskite optoelectronic devices.
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