No Arabic abstract
Defects are generally regarded to have negative impact on carrier recombination, charge-transport and ion migration in perovskite materials, which thus lower the efficiency and stability of perovskite optoelectronic devices. Meanwhile, lots of efforts which focused on minimizing defects have greatly promoted the application of perovskite materials. Then, can defects be positive in perovskite optoelectronic devices? Herein, relying on in-depth understanding of defect-associated effects in semiconductors, trapping of photo-generated carriers by defects is applied to enlarge photoconductive gain in perovskite photodetector. The record photoconductive gain, gain-bandwidth product and detection limit were achieved in the photodetector. Exceeding the general concept that defects are harmful, we identify a new view that the defects can be positive in perovskite optoelectronic devices.
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.
The previously developed bistable amphoteric native defect (BAND) model is used for a comprehensive explanation of the unique photophysical properties and for understanding the remarkable performance of perovskites as photovoltaic materials. It is shown that the amphoteric defects in donor (acceptor) configuration capture a fraction of photoexcited electrons (holes) dividing them into two groups: higher energy bright and lower energy dark electrons (holes). The spatial separation of the dark electrons and the dark holes and the k-space separation of the bright and the dark charge carriers reduce electron hole recombination rates, emulating the properties of an ideal photovoltaic material with a balanced, spatially separated transport of electrons and holes. The BAND model also offers a straightforward explanation for the exceptional insensitivity of the photovoltaic performance of polycrystalline perovskite films to structural and optical inhomogeneities. The blue-shifted radiative recombination of bright electrons and holes results in a large anti-Stokes effect that provides a quantitative explanation for the spectral dependence of the laser cooling effect measured in perovskite platelets.
Two-dimensional Ruddlesden-Popper hybrid lead halide perovskites have become a major topic in perovskite optoelectronics. Here, we aim to unravel the ultrafast dynamics governing the evolution of charge carriers and excitons in these materials. Using a combination of ultrabroadband time-resolved THz (TRTS) and fluorescence upconversion spectroscopies, we find that sequential carrier cooling and exciton formation best explain the observed dynamics, where exciton-exciton interactions play an important role in the form of Auger heating and biexciton formation. We show that the presence of a longer-lived population of carriers is due to these processes and not to a Mott transition. Therefore, excitons still dominate at laser excitation densities. We use kinetic modeling to compare the phenethylammonium and butylammonium organic cations while investigating the stability of the resulting films. In addition, we demonstrate the capability of using ultrabroadband TRTS to study excitons in large binding energy semiconductors through spectral analysis at room temperature.
It is thought that growing large, oriented grains of perovskite can lead to more efficient devices. We study MAPbI3 films fabricated via Flash Infrared Annealing (FIRA) consisting of highly oriented, large grains. Domains observed in the SEM are often misidentified with crystallographic grains, but SEM images dont provide diffraction information. We measure the grain size, crystal structure and grain orientation using Electron Back-Scattered Diffraction (EBSD) and we study how these affect the optoelectronic properties as characterized by local photoluminescence (PL) and time-resolved microwave conductivity measurements (TRMC). We find a spherulitic growth yielding large (tens of micron), highly oriented grains along the (112) and (400) planes in contrast to randomly oriented, smaller (400 nm) grains observed in films fabricated via conventional antisolvent (AS) dripping. We observe a local enhancement and shift of the photoluminescence emission at different regions of the FIRA clusters, but these can be explained with a combination of light-outcoupling and self-absorption. We observe no effect of crystal orientation on the optoelectronic properties. Additionally, despite a substantial difference in grain size between our FIRA sample and a conventional AS sample, we find similar photoluminescence and charge carrier mobilities and lifetime for the two films. These findings show that the optoelectronic quality is not necessarily related to the orientation and size of crystalline domains in perovskite films indicating that fabrication requirements may be more relaxed for perovskites.