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Dark Exciton Preparation in a Quantum Dot by a Longitudinal Light Field Tuned to Higher Exciton States

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 Added by Matthias Holtkemper
 Publication date 2020
  fields Physics
and research's language is English




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Several important proposals to use semiconductor quantum dots in quantum information technology rely on the control of the dark exciton ground states, such as dark exciton based qubits with a $mu$s life time. In this paper, we present an efficient way to occupy the dark exciton ground state by a single short laser pulse. The scheme is based on an optical excitation with a longitudinal field component featured by, e.g., radially polarized beams or certain Laguerre-Gauss or Bessel beams. Utilizing this component, we show within a configuration interaction approach that high-energy exciton states composed of light-hole excitons and higher dark heavy-hole excitons can be addressed. When the higher exciton relaxes, a dark exciton in its ground state is created.



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Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarisation-resolved Fourier imaging and magneto-optical spectroscopy, allow us to fully characterize the hole ground state, including its valence band mixing with heavy hole states.
We have calculated the linear magnetoconductance across a vertical parabolic Quantum Dot with a magnetic field in the direction of the current. Gate voltage and magnetic field are tuned at the degeneracy point between the occupancies N=2 and N=3, close to the Singlet-Triplet transition for N=2. We find that the conductance is enhanced prior to the transition by nearby crossings of the levels of the 3 particle dot. Immediately after it is depressed by roughly 1/3, as long as the total spin S of the 3 electron ground state doesnt change from S=1/2 to S=3/2, due to spin selection rule. At low temperature this dip is very sharp, but the peak is recovered by increasing the temperature.
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