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Register a new userBand gap opening at the Dirac point in Co/BiSbTeSe2(0001) system
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Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization of surface states upon the introduction of Co adatoms, which decrease crystallographic symmetry and eliminate topological protection of the surface states.
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Hybrid perovskites are a rapidly growing research area, having reached photovoltaic power conversion efficiencies of over 25 %. We apply a symmetry-motivated analysis method to analyse X-ray pair distribution function data of the cubic phases of the hybrid perovskites MAPb$X_3$ ($X$ = I, Br, Cl). We demonstrate that the local structure of the inorganic components of MAPb$X_3$ ($X$ = I, Br, Cl) are dominated by scissoring type deformations of the Pb$X_6$ octahedra. We find these modes to have a larger amplitude than equivalent distortions in the $A$-site deficient perovskite ScF$_3$ and demonstrate that they show a significant departure from the harmonic approximation. Calculations performed on an all-inorganic analogue to the hybrid perovskite, FrPbBr$_3$, show that the large amplitudes of the scissoring modes are coupled to an opening of the electronic band gap. Finally, we use density functional theory calculations to show that the organic MA cations reorientate to accomodate the large amplitude scissoring modes.
Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moire pattern that replicates the Moire pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moire pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.
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