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Register a new userStructural and Nanochemical Properties of AlOx Layers in $Al/AlO_x/Al$-Layer Systems for Josephson Junctions
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The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices. However, systematic studies of the influence of oxidation parameters on structural and nanochemical properties are rare up to now, as most studies focus on the electrical properties of $AlO_x$ layers. This study aims to close this gap by applying transmission electron microscopy in combination with electron energy loss spectroscopy to analyze the structural and nanochemical properties of differently fabricated $AlO_x$ layers and correlate them with fabrication parameters. With respect to the application of $AlO_x$ as tunnel barrier in superconducting Josephson junctions, $Al/AlO_x/Al$-layer systems were deposited on Si substrates. We will show that the oxygen content and structure of amorphous $AlO_x$ layers is strongly dependent on the fabrication process and oxidation parameters. Dynamic and static oxidation of Al yields oxygen-deficient amorphous $AlO_x$ layers, where the oxygen content ranges from x = 0.5 to x = 1.3 depending on oxygen pressure and substrate temperature. Thicker layers of stoichiometric crystalline $gamma-Al_2O_3$ layers were grown by electron-beam evaporation of $Al_2O_3$ and reactive sputter deposition.
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$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of $Al/AlO_x/Al$-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the $AlO_x$-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the $Al/AlO_x/Al$-layer systems to determine the thickness homogeneity of the $AlO_x$ layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the $Al/AlO_x$ interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole $Al/AlO_x/Al$-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 $mu m$ and large lateral grain sizes up to 1 $mu m$. Thickness fluctuations of the $AlO_x$-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms.
We show that less than 10% of the barrier area dominates the electron tunneling in state-of-art Al/AlOx/Al Josephson junctions. They have been studied by transmission electron microscopy, specifically using atomic resolution annular dark field (ADF) scanning transmission electron microscopy (STEM) imaging. The direct observation of the local barrier thickness shows a Gaussian distribution of the barrier thickness variation along the junction, from ~1 nm to ~2 nm in the three junctions we studied. We have investigated how the thickness distribution varies with oxygen pressure (po) and oxidation time (to) and we find, in agreement with resistance measurements on similar junctions, that an increased to gives a thicker barrier than an increased po.
Laser ablation of Al-Ni alloys and Al films on Ni substrates has been studied by molecular dynamics simulations (MD). The MD method was combined with a two-temperature model to describe the interaction between the laser beam, the electrons and the atoms. The challenge for alloys and mixtures is to find the electronic parameters: electron heat conductivity, electron heat capacity and electron-phonon coupling parameter. The challenge for layered systems is to run simulations of an inhomogeneous system which requires modification of the simulation code. Ablation and laser-induced melting was studied for several Al-Ni compounds. At low fluences above the threshold ordinary ablation behavior occurred while at high fluences the ablation mechanism changed in Al$_3$Ni and AlNi$_3$ from phase explosion to vaporization. Al films of various thicknesses on a Ni substrate have also been simulated. Above threshold, 8 nm Al films are ablated as a whole while 24 nm Al films are only partially removed. Below threshold, alloying with a mixture gradient has been observed in the thin layer system.
The effect of isothermal pre-oxidation treatments on the b{eta}-(Ni,Pt)Al + Rene N5 system degradation is here reported. The oxidation treatments were carried out from 900 (mostly {theta}-Al2O3 growing conditions) to 1200{deg}C (mainly {alpha}-Al2O3 growing conditions) for 5 h, under a purified Ar-stream with a fixed pO2= 1 x 10-5 atm. Results are discussed based on the correlation between the structural, microstructural and chemical properties of the b{eta}-(Ni,Pt)Al BC showing that pre-oxidation parameters have an important effect on the multi-elemental counter diffusion phenomena along BC. For instance, a significant BC+IDZ thickness increase of 55% at 1200 {deg}C was observed with respect to as-received sample just after 5 h of oxidation resulting in a severe BC degradation.
We have probed the superconducting proximity effect through long high-quality monocrystalline Ag nanowires, by realizing Josephson junctions of different lengths, with different superconducting materials. Thanks to the high number of junctions probed, both the contact resistance and electron diffusion constant could be determined, enabling a comparison of the measured critical current to theoretical expectation, over the entire regime from short to long diffusive junction. Although the length dependence of the critical current is as expected, the amplitude of the $R_{N}I_c$ product is smaller than predicted by theory. We also address the magnetic field dependence of the critical current. The quasi-gaussian decay of the critical current with field expected of a long narrow junction is observed for all superconducting contacts we used except for aluminum. We present the striking non-monotonous effect of field on the critical current of junctions with aluminum contacts, and analyze it in terms of improved quasiparticle thermalization by a magnetic field.
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